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作 者:Chao Tan Junling Lü Chunchi Zhang Dong Liang Lei Yang Zegao Wang
机构地区:[1]College of Materials Science and Engineering,Sichuan University,Chengdu 610065,China [2]The 54th Research Institute of China Electronics Technology Group Corporation,Shijiazhuang 050081,China
出 处:《International Journal of Minerals,Metallurgy and Materials》2025年第1期214-220,共7页矿物冶金与材料学报(英文版)
基 金:financially supported by the National Natural Science Foundation of China(Nos.52272160,U2330112,and 52002254);Sichuan Science and Technology Foundation(Nos.2020YJ0262,2021YFH0127,2022YFH0083,2022YFSY0045,and 2023YFSY0002);the Chunhui Plan of Ministry of Education,Fundamental Research Funds for the Central Universities,China(No.YJ201893);the Foundation of Key Laboratory of Lidar and Device,Sichuan Province,China(No.LLD2023-006)。
摘 要:Nowadays,force sensors play an important role in industrial production,electronic information,medical health,and many other fields.Two-dimensional material-based filed effect transistor(2D-FET)sensors are competitive with nano-level size,lower power consumption,and accurate response.However,few of them has the capability of impulse detection which is a path function,expressing the cumulative effect of the force on the particle over a period of time.Herein we fabricated the flexible polymethyl methacrylate(PMMA)gate dielectric MoS_(2)-FET for force and impulse sensor application.We systematically investigated the responses of the sensor to constant force and varying forces,and achieved the conversion factors of the drain current signals(I_(ds))to the detected impulse(I).The applied force was detected and recorded by I_(ds)with a low power consumption of~30 nW.The sensitivity of the device can reach~8000%and the 4×1 sensor array is able to detect and locate the normal force applied on it.Moreover,there was almost no performance loss for the device as left in the air for two months.
关 键 词:flexible gate dielectric transistor force sensor impulse sensor force sensor array
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