核扩展的萘二酰亚胺-插烯四硫富瓦烯类双极性有机半导体  

Core-Expanded Naphthalene Diimides-Vinylogous Tetrathiafulvalenes toward Ambipolar Organic Semiconductors

作　　者：张瑞 何萌萌 向焌钧 蔡莎莉 葛从伍 高希珂[2] Zhang Rui;He Mengmeng;Xiang Junjun;Cai Shali;Ge Congwu;Gao Xike(School of Chemistry and Materials Science,University of Science and Technology of China,Hefei 230026;State Key Laboratory of Organometallic Chemistry,Shanghai Institute of Organic Chemistry,Chinese Academy of Sciences,Shanghai 200032;College of Chemistry and Materials Science,Sichuan Normal University,Chengdu 610066)

机构地区：[1]中国科学技术大学化学与材料科学学院,合肥230026 [2]中国科学院上海有机化学研究所金属有机化学国家重点实验室,上海200032 [3]四川师范大学化学与材料科学学院,成都610066

出　　处：《有机化学》2024年第9期2810-2819,共10页Chinese Journal of Organic Chemistry

基　　金：国家自然科学基金(No.22225506);中国科学院战略性先导科技专项B类(No.XDB0520101);上海市启明星计划(No.21QA1411100);中国科学院青年创新促进会(No.2022252)资助项目.

摘　　要：与p-型和n-型有机半导体相结合的方法相比,双极性有机半导体在构筑逻辑互补电路方面具有明显优势,然而,目前综合性能优良的双极性有机半导体仍较为缺乏.通过能级调控策略,设计合成了五个苯并六元氮/氧/硫杂环核扩展的萘二酰亚胺-插烯四硫富瓦烯(NDI-VTTF)衍生物1~5,并对其底栅顶接触结构的有机场效应晶体管(OFET)器件性能进行了研究.结果表明化合物1~5均具有双极性载流子传输特性,其中化合物1,3~5是电子传输主导的双极性有机半导体,而化合物2是电子和空穴传输性能平衡的双极性有机半导体.得益于热退火处理对薄膜结晶性的提高和微观形貌的改善,基于化合物1~5的薄膜OFET器件的迁移率均随热退火温度的升高而增大,其中基于化合物2的薄膜OFET器件经180℃热退火后的电子和空穴迁移率分别达到0.037和0.050 cm^(2)·V^(-1)·s^(-1).In comparison with the combination of p-and n-type organic semiconductors,the way to construct logic complementary circuits by ambipolar organic semiconductors has obvious advantages.However,so far,the ambipolar ones with high performance are still scarce.In this work,a series of benzo six-membered nitrogen/oxygen/sulfur heterocycles core-substituted naphthalene diimides-vinylogous tetrathiafulvalene(NDI-VTTF)derivatives 1~5 were designed by energy level regulation strategy.Subsequently,bottom-gate and top-contact organic field-effect transistors(OFETs)based on compounds 1~5 were fabricated and systematically studied.The results showed that all the OFET devices exhibit ambipolar semiconducting behaviors,among them the OFET devices based on compounds 1,3~5 displayed electron-dominated ambipolar charge transport characteristics,while the devices based on compound 2 showed balanced ambipolar charge transport features.Due to the improvement of thin-film crystallinity and morphology by thermal annealing treatment,the performance of OFETs based on compounds 1~5 was improved with the increase of thermal annealing temperature.When thermal annealed at 180℃,OFETs based on compound 2 showed the balanced electron and hole mobilities of up to 0.037 and 0.050 cm^(2)·V^(-1)·s^(-1),respectively.

关 键 词：逻辑互补电路 有机场效应晶体管 双极性有机半导体 萘二酰亚胺-插烯四硫富瓦烯 核扩展 能级调控 

分 类 号：TN304.5[电子电信—物理电子学]