Anisotropic etching of 2D layered materials  

作　　者：Yuge Zhang Qian Liu Deliang Zhang Yue Hong Qiang Li 

机构地区：[1]Key Laboratory of Colloid and Interface Chemistry of the Ministry of Education,School of Chemistry and Chemical Engineering,Shandong University,Jinan 250100,China [2]Interdisciplinary Nanoscience Center(iNANO),Aarhus University,Aarhus C DK-8000,Denmark [3]Department of Biomedicine,Aarhus University,Aarhus C DK-8000,Denmark

出　　处：《ChemPhysMater》2024年第4期341-356,共16页化学物理材料（英文）

基　　金：supported by the Natural Science Foundation of Shandong Province(No.ZR2023MB028);the Grant for Taishan Scholar Advantage Characteristic Discipline of Shandong Province,the Start-up Grant for QiLu Young Scholars of Shandong University.

摘　　要：Two-dimensional(2D)layered materials with unique physicochemical properties,such as graphene,transition metal dichalcogenides,and hexagonal boron nitride,have shown considerable potential in the electrical and electronics industries as well as society.To realize the practical applications of 2D materials,the size,shape,and edge structures must be refined.Etching is a critical processing step in the semiconducting industry and its potential as an efficient approach for fabricating diverse nanostructures of 2D materials has been demonstrated,broadening their applications in the field of nanoelectronics.In this paper,we present an overview of recent advances in anisotropic etching of various 2D materials.Anisotropic etching and the associated mechanisms are discussed in context of the synthesis,processing,and characterization of 2D materials.An overview of the applications of anisotropic etched 2D materials is provided.Finally,the challenges and future opportunities for anisotropic etching of 2D materials are discussed.

关 键 词：2D materials Anisotropic etching NANOSTRUCTURES GRAPHENE MoS_(2) 

分 类 号：TB33[一般工业技术—材料科学与工程]