全包围栅极鳍式场效应管专利态势与技术发展研究  

Study on the Patent Situation and Technology Development of Gate-All-Around Field-Effect Transistor

作　　者：董巍 李海龙[1] DONG Wei;LI Hailong(Patent Examination Cooperation(Tianjin)Center of the Patent Office,CNIPA,Tianjin 300308)

机构地区：[1]国家知识产权局专利局专利审查协作天津中心,天津300308

出　　处：《中国发明与专利》2024年第S02期62-69,共8页China Invention & Patent

摘　　要：随着集成电路技术日新月异的发展,器件尺寸不断缩小,在突破10nm工艺节点后,短沟道效应等问题成为了制约场效应管发展的主要因素。全包围栅极鳍式场效应管作为3D场效应管的一个最新发展分支,由于良好的性能具备巨大的发展潜力。本文从全包围栅极鳍式场效应管基本原理出发,从全球、国内、分类号等不同维度对该领域专利的申请现状进行分析,并进一步梳理了该领域专利技术的发展脉络,对全包围栅极鳍式场效应管专利发展的前景进行了探讨和研究。With the rapid development of integrated circuit technology,the size of the device is constantly shrinking,and after breaking through the 10nm process node,problems such as the short-channel-effect have become the main factors restricting the development of field-effect transistors.As one of the latest technological branches of 3D Field-Effect Transistors(FET),gate-all-around FinFETs(GAAFET)have great developmental potential due to their good performance.This paper analyses the current status of patent applications in this field from the basic principles of GAAFET,from different dimensions,such as international,domestic,and IPC/CPC.This paper further combs through the development of the patent technology in this field,discusses and researches the prospect of the development of GAAFET.

关 键 词：集成电路 全包围栅极鳍式场效应管 专利分析 

分 类 号：TN386[电子电信—物理电子学] G306[文化科学]