Ga_(2)O_(3):Cr^(3+)多中心到单中心发射以及光谱可调的实现  

Ga_(2)O_(3):Cr^(3+)Multi-Center to Single-Center Emission and Spectral Tunable Realization

作　　者：夏成龙 陈煜辉 曾炳阳 杨佳慧 李玲[1] 王治国[1] 刘晓光 XIA Chenglong;CHEN Yuhui;ZENG Bingyang;YANG Jiahui;LI Ling;WANG Zhiguo;LIU Xiaoguang(School of Chemistry and Chemical Engineering,Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules,Hubei University,Wuhan 430062,China)

机构地区：[1]湖北大学化学化工学院、有机功能分子合成与应用教育部重点实验室,湖北武汉430062

出　　处：《聊城大学学报（自然科学版）》2024年第6期29-38,共10页Journal of Liaocheng University:Natural Science Edition

基　　金：国家自然科学基金项目(22273019)资助。

摘　　要：近红外光在农业、医药和无损检测等领域具有广泛应用,但是绝大多数近红外光源存在发光效率低和半高宽窄的问题。为此,通过高温固相法,在不同温度下成功制备了一系列不同浓度Cr^(3+)掺杂的以β-Ga_(2)O_(3)为主要基质的近红外荧光粉。在700℃下合成的Ga_(2)O_(3):Cr^(3+)可以实现奇特的从350 nm到800 nm的宽带双中心发射。当合成温度为800~1100℃时,Ga_(2)O_(3):Cr^(3+)主要表现为近红外区的宽带发射,并且Ga_(2)O_(3):Cr^(3+)的发射光谱随着合成温度的升高出现了从770 nm到730 nm蓝移现象。通过主族元素替换,用In^(3+)替换Ga^(3+)实现了Ga_(2)O_(3):Cr^(3+)光谱从764 nm到810 nm的红移,用Al^(3+)替换Ga^(3+)发现其半高宽逐渐增加。同时,采用格位占据理论说明了Cr^(3+)优先占据具有八面体的Ga2格位。Near-infrared light(NIR)is widely used in agriculture,medicine,non-destructive testing and other fields.But most of the near-infrared light sources have the problems of low luminous efficiency and narrow half-height width.In order to solve these problems,a series of Cr^(3+)doped NIR phosphors withβ-Ga_(2)O_(3) as the main substrate were prepared successfully by high temperature solid phase method at different temperatures.Ga_(2)O_(3):Cr^(3+)synthesized at 700°C enables the peculiar wideband with two-center emission from 350 to 800 nm.When the synthesis temperature rises from 800℃to 1100℃,Ga_(2)O_(3):Cr^(3+)mainly shows wide-band emission in the near infrared region.Moreover,the emission spectrum of Ga_(2)O_(3):Cr^(3+)shows a blue shift from 770 nm to 730 nm with the increase of synthesis temperature.By replacing Ga^(3+)with In^(3+),the spectral redshift of Ga_(2)O_(3):Cr^(3+)from 764 nm to 810 nm was achieved,and the half-height width of Ga^(3+)was gradually increased after replacing Ga^(3+)with Al^(3+).At the same time,the lattice occupation theory is used to show that doped Cr^(3+)preferentially occupies the Ga2 lattice site with octahedron.

关 键 词：光致发光 近红外发光 光谱调节 格位占据 

分 类 号：O74[理学—晶体学]