基于移动加热器法的碲锌镉晶体研究进展  

Research Progress on CdZnTe Crystal Using Traveling Heater Method

作　　者：李尚书 徐超[1,2] LI Shang-shu;XU Chao(Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;National Key Laboratory of Infrared Detection Technologies,Shanghai 200083,China)

机构地区：[1]中国科学院上海技术物理研究所,上海200083 [2]红外探测全国重点实验室,上海200083

出　　处：《红外》2024年第11期1-12,共12页Infrared

摘　　要：碲锌镉(Cadmium Zinc Telluride,CZT)具有优良的物理性质,可用于制备室温核辐射探测器以及用作碲镉汞(Mercury Cadmium Telluride,MCT)红外焦平面衬底材料。多种方法可被用来生长CZT晶体,但难点仍在于获得大体积、低缺陷的单晶。移动加热器法(Traveling Heater Method,THM)是一种主要的CZT晶体生长方法,它具有生长温度低、单晶率高、组分均匀性好等优点。对THM法生长CZT晶体进行了综述,介绍了其发展历程和相关研究结果。首先分析了THM生长的基本原理及工艺流程,然后对生长过程中的宏观形貌特征与关键影响因素进行了阐述,接着分析了Te夹杂缺陷与微观界面形貌的相关关系以及抑制手段,最后对比了THM法与布里奇曼法生长CZT晶体的Zn组分分布差异性,突出了THM法在宏观成分均匀性方面的优势。Cadmium zinc telluride(CZT)has excellent physical properties and can be used to prepare room-temperature nuclear radiation detectors and as substrate materials for mercury cadmium telluride infrared focal planes.Multiple methods can be used to grow CZT crystals,but the difficulty still lies in obtaining high monocrystal volume,low defect density single crystals.The traveling heater method(THM)is a major CZT crystal growth method,which has the advantages of low growth temperature,high single crystal yield,and good composition uniformity.A review was conducted on the growth of CZT crystals using the THM method,introducing its development history and related research results.Firstly,the basic principles and process flow of THM growth were introduced,followed by an explanation of the macroscopic morphology characteristics and key influencing factors during the growth process.Then,the correlation and suppression methods between Te inclusion defects and microscopic interface morphology were analyzed.Finally,the differences in Zn composition distribution between the THM method and the Bridgman method for CZT crystal growth were compared,highlighting the advantages of the THM method in macroscopic composition uniformity.

关 键 词：碲锌镉 移动加热器法 晶体生长 红外焦平面 

分 类 号：TN3[电子电信—物理电子学]