基于VO_(2)相变调控的Ga_(2)O_(3)/VO_(2)异质结器件建模与仿真  

Modeling and Simulation of Ga_(2)O_(3)/VO_(2)Heterojunction Devices Based on VO_(2)Phase Transition Regulation

作　　者：冯云松 周长祺 王思雨 路远 金伟 商袁昕 李亚繁 陈友才 FENG Yunsong;ZHOU Changqi;WANG Siyu;LU Yuan;JIN Wei;SHANG Yuanxin;LI Yafan;CHEN Youcai(Infrared and Low Temperature Plasma Key Laboratory of Anhui Province,College of Electronic Engineering,National University of Defense Technology,Hefei 230037,China;State Key Laboratory of Pulsed Power Laser Technology,College of Electronic Engineering,National University of Defense Technology,Hefei 230037,China;Advanced Laser Technology Laboratory of Anhui Province,College of Electronic Engineering,National University of Defense Technology,Hefei 230037,China)

机构地区：[1]国防科技大学电子对抗学院红外与低温等离子体安徽省重点实验室,安徽合肥230037 [2]国防科技大学电子对抗学院脉冲功率激光技术国家重点实验室,安徽合肥230037 [3]国防科技大学电子对抗学院先进激光技术安徽省实验室,安徽合肥230037

出　　处：《发光学报》2024年第11期1883-1888,共6页Chinese Journal of Luminescence

基　　金：脉冲功率激光技术国家重点实验室主任基金(SKL2022ZR05);国防科技大学科研计划项目(ZK22-26);安徽省自然科学基金(1908085MA13)。

摘　　要：利用COMSOL multiphysics软件对基于Ga_(2)O_(3)/VO_(2)的异质结光电器件进行了二维物理仿真。分析并报道了基于VO2相变调控的Ga_(2)O_(3)/VO_(2)异质结光电器件的掺杂曲线、能级图、电场分布与电势分布等。探索了器件在光电探测器方面的应用,通过模拟器件在1 V偏压和10μW的光照条件下峰值响应率为0.068 A/W,抑制比(R250 nm/R450 nm)达到105量级。该模拟计算数据为进一步优化Ga_(2)O_(3)/VO_(2)光电二极管实验研究和应用有所裨益。In this paper,two-dimensional physical modeling and simulation of Ga_(2)O_(3)/VO_(2)heterojunction optoelec⁃tronic devices were carried out using COMSOL multiphysics software.The doping curve,energy level diagram,elec⁃tric field distribution and potential distribution of Ga_(2)O_(3)/VO_(2)heterojunction optoelectronic devices based on VO_(2)phase transition regulation are analyzed and reported.The application of the device in photodetector is explored.The peak response rate is 0.068 A/W and the rejection ratio(R250 nm/R450 nm)reaches 105 orders under 1 V bias and 10μW illumination conditions.The simulation data are helpful for further optimization of experimental research and ap⁃plication of Ga_(2)O_(3)/VO_(2)photodiodes.

关 键 词：Ga_(2)O_(3)/VO_(2)异质结 COMSOL VO_(2)相变 能级结构 仿真 

分 类 号：TN304[电子电信—物理电子学]