dI/dt和dV/dt控制的自适应电流型IGBT栅极驱动  

Adaptive current source IGBT gate driver controlled by dI/dt and dV/dt

作　　者：刘畅[1] 杨硕瀚 童乔凌[1] 李启东[1] LIU Chang;YANG Shuohan;TONG Qiaoling;LI Qidong(School of Integrated Circuits,Huazhong University of Science and Technology,Wuhan 430074,China)

机构地区：[1]华中科技大学集成电路学院,湖北武汉430074

出　　处：《华中科技大学学报（自然科学版）》2024年第9期9-15,共7页Journal of Huazhong University of Science and Technology(Natural Science Edition)

基　　金：国家重点研发计划资助项目(2021YFB2401600)。

摘　　要：为了减小绝缘栅型双极晶体管(IGBT)在开关过程中产生的电磁干扰(EMI),设计了一款d I/dt和d V/dt控制的自适应电流型IGBT栅极驱动器.通过对IGBT器件开关过程的分析,总结出EMI产生的原因是IGBT在开启和关断过程中的电流过冲和电压过冲.为了解决这个问题,采用电感和高耐压电容来检测IGBT开关过程中产生的dIC/dt和d V_(CE)/dt,在特定的开关阶段减小栅极驱动电流,以减小电流过冲和电压过冲,抑制EMI的产生.在抑制EMI的同时,所提出的驱动不会显著增加开关时间,并且开关损耗明显低于传统的栅极驱动器.采用华虹BCD180GE工艺进行设计,仿真结果表明:在相同的电流过冲或电压过冲条件下,所设计驱动的开启和关断损耗分别下降了16%和26%.To reduce the electromagnetic interference(EMI) generated by insulated gate bipolar transistors(IGBT) during the switching process,an adaptive current source IGBT gate driver controlled by dI/dt and dV/dt was designed.Through the analysis of the IGBT switching process,it was concluded that the generation of EMI is caused by current overshoot and voltage overshoot during the IGBT turn-on and turn-off processes.To address this issue,inductance and high-voltage capacitors were employed to detect d IC/dt and dV_(CE)/dt during the IGBT switching process,reducing the gate drive current in specific switching stages and suppressing current overshoot and voltage overshoot to inhibit EMI generation.Moreover,the proposed driver did not significantly increase the switching time and exhibited lower switching losses compared to traditional gate drivers.The design of the driver was implemented using the HHGrace BCD180GE process,and simulation results demonstrate a reduction in turn-on and turn-off losses by 16% and 26%,respectively,under the same conditions of current overshoot or voltage overshoot.

关 键 词：绝缘栅型双极晶体管(IGBT) 有源栅极驱动 电磁干扰(EMI) 电压过冲 电流过冲 开关损耗 

分 类 号：TN322.8[电子电信—物理电子学]