阵列蒸发源对平移基板成膜均匀性的研究  

Study on Film Formation Uniformity of Horizontally Moving Substrate by Array Evaporation Sources

作　　者：唐政 TANG Zheng(Suzhou Fangsheng Optoelectronics Co.,Ltd.,Suzhou 215211,China)

机构地区：[1]苏州方昇光电股份有限公司,江苏苏州215211

出　　处：《真空》2024年第6期21-25,共5页Vacuum

基　　金：苏州市碳达峰碳中和科技重点专项项目(ST201212)。

摘　　要：通过离散数学积分工具推导了膜厚分布公式,描述了实际工程中具有非余弦蒸发规律的阵列蒸发源的蒸发情况。研究了不同阵列蒸发源对平移基板的成膜分布规律,并根据该规律设计了蒸发源的空间布局,主要探讨了阵列蒸发源对平移基板成膜均匀性的计算方法及膜厚分布规律,并分析了不同蒸发源开孔配置对上方基板膜厚分布的影响。结果表明,阵列蒸发源对基板的总体膜厚呈现中间周期性波动、两端分布相对低的现象;需要保持相对错位的几何阵列配置,且缩小两端的开孔孔距,方可得到比较合理均匀的膜厚分布。The formula of film thickness distribution was derived mainly by the discrete mathematical integration tool,and the evaporation of array evaporation sources with non-cosine evaporation law in practical engineering project was described.The film forming distribution law of translational substrate with different array evaporation sources was studied,and the spatial layout of evaporation sources was designed according to this law.The calculation method and distribution law of the film-forming uniformity of translational substrate with array evaporation source were mainly studied,and the influence of the open hole configuration of the evaporation source on the film thickness distribution of the upper substrate was analyzed.The results show that the overall film thickness of the substrate with array evaporation source shows intermediate periodic fluctuations,and the distribution at both ends is relatively low.It is necessary to maintain the geometric array configuration of relative dislocation and reduce the hole spacing at both ends to obtain a more reasonable and uniform film thickness distribution.

关 键 词：真空镀膜 阵列蒸发源 成膜均匀性 非余弦定律 

分 类 号：O552.3[理学—热学与物质分子运动论]