Transmittance contrast-induced photocurrent:A general strategy for self-powered photodetectors based on MXene electrodes  

作　　者：Hailong Ma Huajing Fang Jiaqi Li Ziqing Li Xiaosheng Fang Hong Wang 

机构地区：[1]Center for Advancing Materials Performance from the Nanoscale(CAMP-Nano),State Key Laboratory for Mechanical Behavior of Materials,Xi'an Jiaotong University,Xi'an,the People's Republic of China [2]Department of Materials Science,Institute of Optoelectronics,Fudan University,Shanghai,the People's Republic of China [3]Department of Materials Science and Engineering&Shenzhen Engineering Research Center for Novel Electronic Information Materials and Devices,Southern University of Science and Technology,Shenzhen,the People's Republic of China

出　　处：《InfoMat》2024年第5期47-57,共11页信息材料（英文）

基　　金：supported by the National Natural Science Foundation of China(No.51902250);H.F.would like to thank the support from the Guangdong Provincial Key Laboratory Program(Grant No.2021B1212040001);Hong Wang acknowledges support from the Shenzhen Science and Technology Program(No.KQTD20180411143514543);Shenzhen DRC project[2018]1433。

摘　　要：The regulation of carrier generation and transport by Schottky junctions enables effective optoelectronic conversion in optoelectronic devices.A simple and general strategy to spontaneously generate photocurrent is of great signifi-cance for self-powered photodetectors but is still being pursued.Here,we pro-pose that a photocurrent can be induced at zero bias by the transmittance contrast of MXene electrodes in MXene/semiconductor Schottky junctions.Two MXene electrodes with a large transmittance contrast(84%)between the thin and thick zones were deposited on the surface of a semiconductor wafer using a simple and robust solution route.Kelvin probe force microscopy tests indicated that the photocurrent at zero bias could be attributed to asymmetric carrier generation and transport between the two Schottky junctions under illumination.As a demonstration,the MXene/GaN ultraviolet(UV)photo-detector exhibits excellent performance superior to its counterpart without transmittance contrast,including high responsivity(81 mA W–1),fast response speed(less than 31 and 29 ms)and ultrahigh on/off ratio(1.33�106),and good UV imaging capability.Furthermore,this strategy has proven to be uni-versal for first-to third-generation semiconductors such as Si and GaAs.These results provide a facile and cost-effective route for high-performance self-powered photodetectors and demonstrate the versatile and promising applica-tions of MXene electrodes in optoelectronics.

关 键 词：GaN MXene Schottky junction self-powered photodetector transmittance contrast 

分 类 号：TN15[电子电信—物理电子学]