In situ construction of PtSe_(2)/Ge Schottky junction array with interface passivation for broadband infrared photodetection and imaging  

作　　者：Xue Li Shuo-En Wu Di Wu Tianxiang Zhao Pei Lin Zhifeng Shi Yongtao Tian Xinjian Li Longhui Zeng Xuechao Yu 

机构地区：[1]School of Physics and Microelectronics,Key Laboratory of Material Physics Ministry of Education,Zhengzhou University,Zhengzhou,Henan,the People's Republic of China [2]Department of Electrical and Computer Engineering,University of California,La Jolla,California,USA [3]National Research Center for Optical Sensors/Communications Integrated Networks,School of Electronic Science and Engineering,Southeast University,Nanjing,Jiangsu,the People's Republic of China [4]Key Laboratory of Multifunctional Nanomaterials and Smart Systems,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou,Jiangsu,the People's Republic of China

出　　处：《InfoMat》2024年第4期37-46,共10页信息材料（英文）

基　　金：supported by the National Natural Science Foundation of China(Nos.U2004165,U22A20138,62374149,and 11974016);Natural Science Foundation of Henan Province,China(No.202300410376);grateful for the technical support from the Nano-X from Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(SINANO).

摘　　要：Infrared(IR)detection is vital for various military and civilian applications.Recent research has highlighted the potential of two-dimensional(2D)topological semimetals in IR detection due to their distinctive advantages,including van der Waals(vdW)stacking,gapless electronic structure,and Van Hove singularities in the electronic density of states.However,challenges such as large-scale patterning,poor photoresponsivity,and high dark current of photodetectors based on 2D topological semimetals significantly impede their wider applications in low-energy photon sensing.Here,we demonstrate the in situ fabrication of PtSe_(2)/Ge Schottky junction by directly depositing 2D PtSe_(2) films with a vertical layer structure on a Ge substrate with an ultrathin AlOx layer.Due to high quality junction,the photodetector features a broadband response of up to 4.6μm,along with a high specific detectivity of�1012 Jones,and operates with remarkable stability in ambient conditions as well.Moreover,the highly integrated device arrays based on PtSe_(2)/AlOx/Ge Schottky junction showcases excellent Mid-IR(MIR)imaging capability at room temperature.These findings highlight the promising prospects of 2D topological semimetals for uncooled IR photodetection and imaging applications.

关 键 词：broadband photodetection IMAGING platinum diselenide Schottky junction van der Waals integration 

分 类 号：TN21[电子电信—物理电子学]