Active pixel image sensor array for dual vision using large-area bilayer WS_(2)  

作　　者：Arindam Bala Mayuri Sritharan Na Liu Muhammad Naqi Anamika Sen Gyuchull Han Hyun Yeol Rho Youngki Yoon Sunkook Kim 

机构地区：[1]School of Advanced Materials Science and Engineering,Sungkyunkwan University,Suwon,Republic of Korea [2]Waterloo Institute for Nanotechnology(WIN),University of Waterloo,Waterloo,Ontario,Canada [3]Department of Electrical and Computer Engineering,University of Waterloo,Waterloo,Ontario,Canada

出　　处：《InfoMat》2024年第4期68-82,共15页信息材料（英文）

基　　金：supported in part by the National Research Foundation of Korea(2022M3D1A2083618,2021M3H4A1A02056037,2022H1D3A2A01096362,RS-2023-00237585,RS-2023-00237308);supported in part by Ontario's Ministry of Research,Innovation,and Science through Early Researcher Awards(ER17-13-205);also in part by NSERC Discovery Grant(RGPIN-2020-04070);M.S.is supported in part by the NSERC Canada Graduate Scholarship-Master's(CGS-M)program and the WIN Nanofellowship.

摘　　要：Transition metal dichalcogenides(TMDs)are a promising candidate for developing advanced sensors,particularly for day and night vision systems in vehicles,drones,and security surveillance.While traditional systems rely on separate sensors for different lighting conditions,TMDs can absorb light across a broad-spectrum range.In this study,a dual vision active pixel image sensor array based on bilayer WS2 phototransistors was implemented.The bilayer WS2 film was synthesized using a combined process of radio-frequency sputtering and chemical vapor deposition.The WS2-based thin-film transistors(TFTs)exhibit high average mobility,excellent Ion/Ioff,and uniform electrical properties.The optoelectronic properties of the TFTs array exhibited consistent behavior and can detect visible to near-infrared light with the highest responsivity of 1821 A W1(at a wavelength of 405 nm)owing to the photogating effect.Finally,red,green,blue,and near-infrared image sensing capabilities of active pixel image sensor array utilizing light stencil projection were demonstrated.The proposed image sensor array utilizing WS2 phototransistors has the potential to revolutionize the field of vision sensing,which could lead to a range of new opportunities in various applications,including night vision,pedestrian detection,various surveillance,and security systems.

关 键 词：dual vision image sensors infrared wavelength detection PHOTOTRANSISTORS thin-film transistor arrays transition metal dichalcogenides 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TP391.41[自动化与计算机技术—控制科学与工程]