Two-dimensional SnP_(2)Se_(6) with gate-tunable Seebeck coefficient for telecommunication band photothermoelectric detection  

作　　者：Bing-Xuan Zhu Cheng-Yi Zhu Jing-Kai Qin Wen He Lin-Qing Yue Pei-Yu Huang Dong Li Ruo-Yao Sun Sheng Ye Yu Du Jie-He Sui Ming-Yu Li Jun Mao Liang Zhen Cheng-Yan Xu 

机构地区：[1]School of Integrated Circuits,Harbin Institute of Technology(Shenzhen),Shenzhen,the People's Republic of China [2]Sauvage Laboratory for Smart Materials,School of Materials Science and Engineering,Harbin Institute of Technology(Shenzhen),Shenzhen,the People's Republic of China [3]MOE Key Laboratory of Micro-Systems and Micro-Structures Manufacturing,Harbin Institute of Technology,Harbin,the People's Republic of China [4]State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology,Harbin,the People's Republic of China

出　　处：《InfoMat》2024年第10期19-30,共12页信息材料（英文）

基　　金：National Key Research and DevelopmentProgram of China, Grant/Award Number:2022YFA1203802;National NaturalScience Foundation of China,Grant/Award Number: 52102161;NaturalScience Foundation of GuangdongProvince, Grant/Award Number:2021A1515012423;Shenzhen Science andTechnology Program, Grant/AwardNumbers: RCYX20221008092912045,RCJC20210706091950025。

摘　　要：Photothermoelectric (PTE) detectors combine photothermal and thermoelectricconversion, surmounting material band gap restrictions and limitations related tomatching light wavelengths, have been widely used in telecommunication banddetection. Two-dimensional (2D) materials with gate-tunable Seebeck coefficientcan induce the generation of photothermal currents under illumination by theasymmetric Seebeck coefficient, making them promising candidate for PTE detectorsin the telecommunication band. In this work, we report that a newly exploredvan der Waals (vdW) layered material, SnP_(2)Se_(6), possessing excellent field regulationcapabilities and behaviors as an ideal candidate for PTE detector implementation.With the assistance of temperature-dependent Raman characterization, thesuspended atomic thin SnP_(2)Se_(6) nanosheets reveal thickness-dependent thermalconductivity of 1.4–5.7 W m^(-1) K^(-1) at room temperature. The 2D SnP_(2)Se_(6) demonstrateshigh Seebeck coefficient (S) and power factor (PF), which are estimated tobe -506 μV K^(-1) and 207 μWm^(-1) K^(-2), respectively. By effectively modulating theSnP_(2)Se_(6) localized carrier concentration, which in turn leads to inhomogeneousSeebeck coefficients, the designed dual-gate PTE detector with 2D SnP_(2)Se_(6) channeldemonstrates wide spectral photoresponse in telecommunication bands, yieldinghigh responsivity (R = 1.2 mA W^(-1)) and detectivity (D^(*) = 6× 10^(9) Jones)under 1550 nm light illumination. Our findings provide a new material platformand device configuration for the telecommunication band detection.

关 键 词：PHOTODETECTION photothermoelectric effect Seebeck coefficient telecommunication bands two-dimensional semiconductor 

分 类 号：TN15[电子电信—物理电子学]