Hot-carrier engineering for two-dimensional integrated infrared optoelectronics  

作　　者：Yuanfang Yu Jialin Zhang Lianhui Wang Zhenhua Ni Junpeng Lu Li Gao 

机构地区：[1]State Key Laboratory for Organic Electronics and Information Displays,Institute of Advanced Materials,School of Materials Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing,People's Republic of China [2]Key Laboratory of Quantum Materials and Devices of Ministry of Education,School of Physics,Southeast University,Nanjing,China [3]School of Science,Nanjing University of Posts and Telecommunications,Nanjing,People's Republic of China

出　　处：《InfoMat》2024年第9期50-74,共25页信息材料（英文）

基　　金：National Key Research and Development Program of China,Grant/Award Numbers:2021YFA1202904,2023YFB3611400;Project of State Key Laboratory of Organic Electronics and Information Displays,Nanjing University of Posts and Telecommunications,Grant/Award Number:GZR2024010024;Natural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications,Grant/Award Number:NY223181;National Natural Science Foundation of China,Grant/Award Numbers:62375139,62288102,62235008,62174026,62225404;Natural Science Foundation of Jiangsu Province Major Project,Grant/Award Number:BK20212012;Project of State Key Laboratory of Organic Electronics and Information Displays,Grant/Award Number:GDX2022010007。

摘　　要：Plasmonic hot carrier engineering holds great promise for advanced infrared optoelectronic devices.The process of hot carrier transfer has the potential to surpass the spectral limitations of semiconductors,enabling detection of subbandgap infrared photons.By harvesting hot carriers prior to thermalization,energy dissipation is minimized,leading to highly efficient photoelectric conversion.Distinguished from conventional band-edge carriers,the ultrafast interfacial transfer and ballistic transport of hot carriers present unprecedented opportunities for high-speed photoelectric conversion.However,a complete description on the underlying mechanism of hot-carrier infrared optoelectronic device is still lacking,and the utilization of this strategy for tailoring infrared response is in its early stages.This review aims to provide a comprehensive overview of the generation,transfer and transport dynamics of hot carriers.Basic principles of hot-carrier conversion in heterostructures are discussed in detail.In addition,progresses of two-dimensional(2D)infrared hot-carrier optoelectronic devices are summarized,with a specific emphasis on photodetectors,solar cells,light-emitting devices and novel functionalities through hot-carrier engineering.Furthermore,challenges and prospects of hot-carrier device towards infrared applications are highlighted.

关 键 词：hot carriers infrared optoelectronic devices surface plasmon resonance two-dimensional materials 

分 类 号：TN21[电子电信—物理电子学]