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作 者:Xuefen Song Junran Zhang Yuchi Qian Zhongjing Xia Jinlian Chen Hao Yin Jing Liu Linbo Feng Tianyu Liu Zihong Zhu Yuyang Hua You Liu Jiaxiao Yuan Feixiang Ge Dawei Zhou Mubai Li Yang Hang Fangfang Wang Tianshi Qin Lin Wang
出 处:《InfoMat》2024年第9期103-111,共9页信息材料(英文)
基 金:National Key Research and Development Program of China,Grant/Award Numbers:2020YFA0308900,2022YFB3602801;National Natural Science Foundation of China,Grant/Award Numbers:52373290,62288102。
摘 要:Halide perovskites with naturally coupled electron-ion dynamics hold greatpotential for nonvolatile memory applications. Self-rectifying memristors arepromising as they can avoid sneak currents and simplify device configuration.Here we report a self-rectifying memristor firstly achieved in a single perovskite(NH CINH_(3))_(3)PbI_(5) (abbreviated as (IFA)_(3)PbI_(5)), which is sandwiched byAg and ITO electrodes as the simplest cell in a crossbar array device configuration.The iodide ions of (IFA)_(3)PbI_(5) can be easily activated, of which the migrationin the bulk contributes to the resistance hysteresis and the reaction withAg at the interface contributes to the spontaneous formation of AgI. The perfectcombination of n-type AgI and p-type (IFA)_(3)PbI_(5) gives rise to the rectificationfunction like a p–n diode. Such a self-rectifying memristor exhibits therecord-low set power consumption and voltage. This work emphasizes that themultifunction of ions in perovskites can simplify the fabrication procedure,decrease the programming power, and increase the integration density offuture memory devices.
关 键 词:halide perovskite low power low SET voltage MEMRISTOR self-rectifying
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