650 ps SET speed in Ge_(2)Sb_(2)Te_(5) phase change memory induced by TiO_(2) dielectric crystal plane  

作　　者：Ruizhe Zhao Ke Gao Rongjiang Zhu Zhuoran Zhang Qiang He Ming Xu Niannian Yu Hao Tong Xiangshui Miao 

机构地区：[1]School of Integrated Circuits,Huazhong University of Science and Technology,Wuhan,People's Republic of China [2]Hubei Yangtze Memory Laboratories,Wuhan,People's Republic of China [3]School of Science,Wuhan University of Technology,Wuhan,People's Republic of China

出　　处：《InfoMat》2024年第9期112-122,共11页信息材料（英文）

基　　金：the National Key Research andDevelopment Program of China,Grant/Award Number:2021YFA1202804;the National Natural Science Foundationof China,Grant/Award Number:62174065;the Hubei Provincial NaturalScience Foundation of China,Grant/Award Number:2021CFA038。

摘　　要：Crystallization speed of phase change material is one of the main obstaclesfor the application of phase change memory(PCM)as storage classmemory in computing systems,which requires the combination ofnonvolatility with ultra-fast operation speed in nanoseconds.Here,wepropose a novel approach to speed up crystallization process of the onlycommercial phase change chalcogenide Ge_(2)Sb_(2)Te_(5)(GST).By employingTiO_(2) as the dielectric layer in phase change device,operation speed of650 ps has been achieved,which is the fastest among existing representativePCM,and is comparable to the programing speed of commercialdynamic random access memory(DRAM).Because of its octahedralatomic configuration,TiO_(2) can provide nucleation interfaces for GST,thus facilitating the crystal growth at the determinate interface area.Ti–O–Ti–O four-fold rings on the(110)plane of tetragonal TiO_(2) is critical forthe fast-atomic rearrangement in the amorphous matrix of GST thatenables ultra-fast operation speed.The significant improvement of operationspeed in PCM through incorporating standard dielectric materialTiO_(2) in DRAM paves the way for the application of phase change memoryin high performance cache-type data storage.

关 键 词：Ge_(2)Sb_(2)Te_(5) octahedral configuration phase change memory TiO_(2) dielectric interface 

分 类 号：TP333[自动化与计算机技术—计算机系统结构]