Surface engineering of highly ordered Bi_(2)S_(3) film with open channels toward high-performance broadband photodetection  

作　　者：Ping Rong Shiyong Gao Lin Li Wen He Mingyi Zhang Shuai Ren Yajie Han Shujie Jiao Qing Chen Jinzhong Wang 

机构地区：[1]School of Materials Science and Engineering,Harbin Institute of Technology,Harbin,the People's Republic of China [2]National Key Laboratory of Precision Hot Processing of Metals,Harbin Institute of Technology,Harbin,the People's Republic of China [3]Key Laboratory for Photonic and Electronic Bandgap Materials,Ministry of Education,School of Physics and Electronic Engineering,Harbin Normal University,Harbin,the People's Republic of China [4]Sauvage Laboratory for Smart Materials,School of Materials Science and Engineering,Harbin Institute of Technology(Shenzhen),Shenzhen,the People's Republic of China

出　　处：《InfoMat》2024年第11期108-119,共12页信息材料（英文）

基　　金：National Key Research and Development Program of China,Grant/Award Number:2019YFA0705201;National Natural Science Foundation of China,Grant/Award Number:12074095;Natural Science Foundation of Heilongjiang Province of China,Grant/Award Number:LH2020E033;Heilongjiang Touyan Team。

摘　　要：The highly ordered film assembled by regularly 1D nanostructures has potentialprospects in electronic,photoelectronic and other fields because of its excellentlight-trapping effect and electronic transport property.However,the controlledgrowth of highly ordered film remains a great challenge.Herein,large-area andhighly ordered Bi_(2)S_(3) film is synthesized on fluorophlogopite mica substrate bychemical vapor deposition method.The Bi2S3 film features hollowed-outcrosslinked network structure,assembled by 1D nanobelts that regularly distributein three orientations,which agrees well with the first principles calculations.Based on the as-grown Bi_(2)S_(3) film,the broadband photodetector with a responserange from 365 to 940 nm is fabricated,exhibiting a maximum responsivity upto 98.51 mA W^(–1),specific detectivity of 2.03×10^(10)Jones and fast response timeof 35.19 ms.The stable instantaneous on/off behavior for 500 cycles and reliablephotoresponse characteristics of the Bi_(2)S_(3) photodetector after storage in air for6 months confirm its excellent long-term stability and air stability.Significantly,as sensing pixel and signal receiving terminal,the device successfully achieveshigh-resolution imaging of characters of“H”,“I”and“T”,and secure transmissionof confidential information.This work shows a great potential of the largeareaand highly ordered Bi_(2)S_(3) film toward the development of future multiplefunctional photoelectronic applications.

关 键 词：broadband photodetection encrypted communication highly ordered Bi_(2)S_(3) film imaging open channel 

分 类 号：TB383[一般工业技术—材料科学与工程]