室温硒化法制备Ag_(2)Se薄膜宽波段光热电探测器  

Preparation of a Broadband Ag_(2)Se Film Photothermoelectric Detector via a Room-temperature Selenization Method

作　　者：周家民 王泽高 周重见 杨磊 ZHOU Jiamin;WANG Zegao;ZHOU Chongjian;YANG Lei(School of Materials Science and Engineering,Sichuan University,Chengdu 610065,China;School of Materials Science and Engineering,Northwestern Polytechnical University,Xi'an 710072,China;State Key Laboratory ofSolidification Processing,Northwestern Polytechnical University,Xi'an 710072,China)

机构地区：[1]四川大学材料科学与工程学院,四川成都610065 [2]西北工业大学材料学院,陕西西安710072 [3]西北工业大学凝固技术国家重点实验室,陕西西安710072

出　　处：《铸造技术》2024年第11期1061-1068,共8页Foundry Technology

基　　金：凝固技术国家重点实验室开放课题(SKLSP202315);凝固技术国家重点实验室基金(2023-QZ-01);国家自然科学基金(22379124)。

摘　　要：宽波段光探测在成像、光通讯等领域有着广泛的应用,光热电效应是能实现宽波段探测的机理之一。Ag_(2)Se拥有卓越的室温热电性能和光热转换能力,在宽波段光热电探测领域有着巨大的应用潜力。通过离子沉积和溶液硒化法制备了厚度可控的Ag_(2)Se薄膜,利用退火诱发再结晶并优化了热电性能,之后开展了从紫外(370 nm)到近红外(1550 nm)的系统性宽波段光响应测试。结果表明Ag_(2)Se薄膜具有对宽波段光的敏感响应能力,其中1550 nm光照射下的最大响应可达2.8 mV,响应度(Rv)约为106.3 mV/W,这种宽波段响应能力源于其吸收光子后发生的非辐射复合过程不受能带隙的约束。Broadband photodetectors are widely applied in many fields,including imaging and optical communication,and can be achieved via many strategies,such as the photothermoelectric effect.Ag_(2)Se has excellent thermoelectric properties and photothermal conversion abilities,showing great potential in broadband photothermoelectric detection.In this study,Ag_(2)Se films with controlled thicknesses were synthesized via ion sputtering and a solution-based selenization process,and recrystallization was then induced through annealing to optimize the thermoelectric properties.The as-assembled Ag_(2)Se-based detectors exhibit broadband photoresponses from ultraviolet(370 nm)to near-infrared(1550 nm)wavelengths,and the maximum response and the responsivity(Rv)under 1550 nm illumination reach 2.8 mV and 106.3 mV/W,respectively.This broadband response ability originates from the independence of the nonradiative process after the absorption of photons on the bandgap.

关 键 词：Ag_(2)Se 退火 光热电效应 宽波段探测 

分 类 号：TG156.2[金属学及工艺—热处理] TN377[金属学及工艺—金属学]