基于EMR与V_(eE_peak)组合电参数的IGBT模块封装老化监测  

PACKAGING AGING MONITORING BASED ON EMR AND V_(eE_peak)COMBINED ELECTRICAL PARAMETERS IN IGBT MODULE

作　　者：董超[1] 韦虎俊 尹金良[1] 杜明星[1] Dong Chao;Wei Hujun;Yin Jinliang;Du Mingxing(Tianjin Key Laboratory of New Energy Power Conversion,Transmission and Intelligent Control,Tianjin University of Technology,Tianjin 300384,China)

机构地区：[1]天津市新能源电力变换传输与智能控制重点实验室(天津理工大学),天津300384

出　　处：《太阳能学报》2024年第11期1-8,共8页Acta Energiae Solaris Sinica

基　　金：天津市技术创新引导专项基金(20YDTPJC00510)。

摘　　要：该文提出一种基于电磁辐射干扰(EMR)与V_(eE_peak)组合电参数监测IGBT模块封装老化的方法,旨在监测多种老化同时发生时IGBT模块的健康状态。首先,分析V_(eE_peak)和EMR的产生机理以及模块内部寄生参数对VeE和EMR的影响;其次,分析不同老化对IGBT模块内部寄生参数的影响;最后,结合实验结果证明所提方法的正确性。这是一种不需要复杂监测电路的非侵入式监测方法,可有效降低多种老化耦合对IGBT模块健康状态监测结果产生的误差。A method is proposed for the packaging aging of IGBT modules to be monitored,based on the combination of EMR and V_(eE_peak)electrical parameters,with the aim of the health status of IGBT modules being monitored when multiple aging events occur simultaneously.Firstly,the generation mechanism of V_(eE_peak)and radiated interference signal(EMR)and the influence of parasitic parameters inside the module on VeE and EMR were analyzed.Secondly,the impact of bond wire lift-off and solder layer voids on the internal parasitic parameters of IGBT modules is analyzed.Finally,the feasibility of this method was verified through experiments.This is a non-invasive monitoring method that does not require complex monitoring circuits,which can effectively reduce the errors caused by various aging coupling on the health status monitoring results of IGBT modules.

关 键 词：焊料层空洞 IGBT模块 键合线老化 电磁辐射干扰 V_(eE_peak) 

分 类 号：TN322.8[电子电信—物理电子学] TN386