薄片化准单晶硅电池光伏性能研究  

STUDY ON PHOTOVOLTAIC PERFORMANCE OF QUASI-SINGLE CRYSTALLINE SILICON CELLS UNDER THINNING

作　　者：马少波 李进[2] 瞿立 马润 王忠良 Ma Shaobo;Li Jin;Qu Li;Ma Run;Wang Zhongliang(School of Mathematics and Statistics,Ningxia University,Yinchuan 750021,China;School of Materials and New Energy,Ningxia University,Yinchuan 750021,China)

机构地区：[1]宁夏大学数学统计学院,银川750021 [2]宁夏大学材料与新能源学院,银川750021

出　　处：《太阳能学报》2024年第11期170-177,共8页Acta Energiae Solaris Sinica

基　　金：国家自然科学基金(51962030);银川市科技创新项目(2022XQZD006);中央引导地方科技发展专项(2021FRD05006)。

摘　　要：利用Quokka2软件对以准单晶硅片为衬底的太阳电池进行模拟仿真,研究硅片厚度对不同氧含量、体寿命的准单晶硅太阳电池转换效率以及功率损耗的影响。与直拉单晶硅相比,准单晶硅成本较低,硅片内缺陷较多、氧含量较低。通过将准单晶硅片应用于钝化发射极和背面电池(PERC)以及叉指背电极接触电池(IBC),比较硅片在不同电池结构下的光伏性能。结果表明:随着硅片厚度从150μm降到70μm,Shockley-Read-Hall(SRH)复合损耗也随之降低,最高可达1.14 mW/cm^(2),但同时短路电流密度的下降也有0.95 mA/cm^(2),相互影响下电池转换效率仍有一定的提升。薄片化准单晶硅PERC太阳电池转换效率可达23.04%;薄片化准单晶硅IBC太阳电池转换效率可达23.73%。Quokka2 software was used to simulate solar cells with quasi-single crystalline silicon as substrate,and the effect of silicon thickness on the conversion efficiency and power loss of quasi-single crystalline silicon solar cells with different oxygen content and bulk lifetime was studied.Compared with Czochralski monocrystalline silicon,quasi-single crystalline silicon has lower cost,more defects and lower oxygen content.By applying quasi-single crystalline silicon to passivated emitter and back contact cells(PERC)and interdigitated-back contact cells(IBC),the photovoltaic performance of quasi-single crystalline silicon wafers in different cell structures was compared.The results show that the Shockley-Read Hall(SRH)composite loss also decreases up to 1.14 mW/cm^(2) with the thickness of the silicon wafer dropping from 150μm to 70μm,but the short circuit current decreases by 0.95 mA/cm^(2) at the same time,and the cell conversion efficiency is still improved to some extent under the mutual influence.Under thinning,the conversion efficiency of quasi-single crystalline PERC solar cell can reach 23.04%.The conversion efficiency of quasi-single crystalline IBC solar cell can reach 23.73%.

关 键 词：太阳电池 厚度控制 数值模拟 准单晶硅 功率损耗分析 

分 类 号：TM914.4[电气工程—电力电子与电力传动]