氧化镓粉体的电解法合成及性能研究  

Electrolytic synthesis of gallium oxide powders and study oftheir properties

作　　者：廖文琦 徐华蕊[1] 陈彩明[1] 赵昀云[1] 龙神峰 韦婷婷 朱归胜[1] LIAO Wenqi;XU Huarui;CHEN Caiming;ZHAO Yunyun;LONG Shenfeng;WEI Tingting;ZHU Guisheng(Engineering Research Center of Electronic Information Materials and Devices,Ministry of Education,Guangxi Key Laboratory of Information Materials,School of Materials Science and Engineering,Guilin University of Electronic Technology,Guilin 541004,China)

机构地区：[1]桂林电子科技大学材料科学与工程学院,电子信息材料与器件教育部工程研究中心,广西信息材料重点实验室,广西桂林541004

出　　处：《功能材料》2024年第11期11031-11037,共7页Journal of Functional Materials

基　　金：国家自然科学基金项目(62364007,U21A2065);广西科技计划项目(桂科AA21077018,桂科AD23023013,桂科AB23075218);桂林市科学研究与技术开发计划项目(20220120-1)。

摘　　要：随着显示器件对导电薄膜的要求越来越高,高致密度、高电导率的IGZO靶材得以迅速发展。本文采用一种合Ga_(2)O_(3)的新方法电解法,以纯Ga金属片为阳极,以石墨棒为阴极,以NH4Cl水溶液为电解液,成功合成了平均粒径约为580nm的片层茧状GaOOH纳米颗粒。该纳米颗粒分别在500和800℃下煅烧3h,获得α-Ga_(2)O_(3)和β-Ga_(2)O_(3)纳米粉体,并以该β-Ga_(2)O_(3)粉体为原料采用冷烧结工艺同高温烧结相结合制备β-Ga_(2)O_(3)靶材,并对β-Ga_(2)O_(3)靶材的烧结性能和微观结构进行了研究。结果表明,电流密度对GaOOH纳米颗粒的形貌和粒径具有显著影响,当电流密度为1A/cm2时获得的GaOOH片层茧状纳米颗粒,其颗粒尺寸小且尺寸均匀。经冷烧结工艺-高温烧结获得更高密度的β-Ga_(2)O_(3)靶材,其相对密度达到98.91%,为后续制备高致密度、高电导率的IGZO靶材提供了参考。With the increasing requirements of conductive films for display devices,IGZO targets with high densities and high conductivities have been rapidly developed.In this paper,a new method of synthesizing Ga_(2)O_(3) by electrolysis,using pure Ga metal sheet as anode,graphite rod as cathode,and NH_(4)Cl aqueous solution as electrolyte,we successfully synthesized lamellar cocoon-shaped GaOOH nanoparticles with an average particle size of about 580 nm,which were calcined at 500℃and 800℃for 3 h,respectively,to obtainα-Ga_(2)O_(3) andβ-Ga_(2)O_(3) Theα-Ga_(2)O_(3) andβ-Ga_(2)O_(3) nanopowders were obtained,and theβ-Ga_(2)O_(3) target was prepared from theβ-Ga_(2)O_(3) powder by combining the cold sintering process with high-temperature sintering,and the sintering performance and microstructure of theβ-Ga_(2)O_(3) target were investigated.The results show that the current density has a significant effect on the morphology and particle size of GaOOH nanoparticles,and the GaOOH lamellar cocoon-like nanoparticles obtained when the current density is 1 A/cm^(2) have small and uniform particle size.The higher densityβ-Ga_(2)O_(3) target was obtained by cold sintering process-high temperature sintering,and its relative density reached 98.91%,which provided a reference for the subsequent preparation of IGZO targets with high densities and high conductivities.

关 键 词：电流密度 GaOOH纳米颗粒 β-Ga_(2)O_(3) 冷烧结工艺 β-Ga_(2)O_(3)靶材 

分 类 号：TB332[一般工业技术—材料科学与工程]