rGO负载银包覆铜/n-Si的肖特基接触特性研究  

Schottky contact characteristics of silver coated copper/n-Si loaded with rGO

作　　者：冯伟 张会[1,2,3,4] 李亚鹏 王荟琪[1] 李仕琳 武泽园 杨旋 FENG Wei;ZHANG Hui;LI Yapeng;WANG Huiqi;LI Shilin;WU Zeyuan;YANG Xuan(School of Materials Science and Engineering,Shaanxi University of Technology,Hanzhong 723000,China;National and Local Joint Engineering Laboratory of Slag Comprehensive Utilization andEnvironmental Protection Technology,Shaanxi University of Technology,Hanzhong 723000,China;Aircraft Landing Gear Advanced Manufacturing and Performance Test Research Center ofAviation Components,Hanzhong 723000,China;Manufacturing and Test Engineering Research Center of Landing Gear and Aircraft Structural Parts,Shaanxi University,Hanzhong 723000,China)

机构地区：[1]陕西理工大学材料科学与工程学院,陕西汉中723000 [2]陕西理工大学矿渣综合利用环保技术国家地方联合工程实验室,陕西汉中723000 [3]飞机起落架先进制造与航空部件性能试验研究中心,陕西汉中723000 [4]陕西省高校起落架及飞机结构件制造与试验工程研究中心,陕西汉中723000

出　　处：《功能材料》2024年第11期11203-11208,11226,共7页Journal of Functional Materials

基　　金：陕西省科技厅重点研发项目(2024GX-YBXM-376)。

摘　　要：为获得整流特性好、性价比高的肖特基异质结,采用化学还原法制备还原氧化石墨烯负载银包覆铜纳米(rGO/Cu@AgNPs)复合材料,通过旋涂法制备出rGO/Cu@AgNPs/n-Si肖特基异质结,探究rGO/Cu@AgNPs作为电极材料的肖特基接触特性,采用XRD、FT-IR、SEM和EDS等方法进行测试分析。对rGO负载3种不同质量比的Cu@AgNPs进行对比分析,结果表明,当(Cu(NO_(3))_(2)·3H_(2)O和AgNO_(3))的质量比为5∶1.5时,银颗粒对铜颗粒的包覆效果好,形成的包覆颗粒在石墨烯的表面和层间分散性较好,经电流-电压(I-V)测试分析及计算得出该肖特基异质结理想因子为1.43,势垒高度为0.642 eV,表明制备的异质结表现出良好的整流效果。In order to obtain Schottky heterojunctions with good rectification characteristics and cost-effective performance,reduced graphene oxide-loaded silver-coated copper nanocomposites(rGO/Cu@AgNPs)were prepared by chemical reduction method,and rGO/Cu@AgNPs/n-Si Schottky heterojunctions were prepared by spin-coating method,to investigate the Schottky contact characteristics of rGO/Cu@AgNPs as electrode materials.Test methods such as XRD,FT-IR,SEM and EDS were used for testing and analyzing.Comparative analysis of rGO loaded Cu@AgNPs with three different mass ratios showed that when the mass ratio of Cu(NO_(3))_(2)·3H_(2)O and AgNO_(3) was 5:1.5,the silver particles were effective in encapsulating the copper particles,and the formation of the encapsulated particles had a better dispersion on the surface of graphene and in the interlayer,which was tested by current-voltage(I-V).The current-voltage(I-V)test was analyzed and calculated that the ideal factor of the Schottky heterojunction was 1.43,and the barrier height was 0.642 eV,which indicated that the prepared heterojunction exhibited good rectification effect.

关 键 词：化学还原法 还原氧化石墨烯 Cu@Ag纳米粒子 肖特基异质结 电学特性 

分 类 号：TB332[一般工业技术—材料科学与工程]