Nonvolatile ferroelectric control of electronic properties of Bi_(2)Te_(3)  

作　　者：Xusheng Ding Yunfei Li Chaoyang Kang Ye-Heng Song Weifeng Zhang 丁旭升;李云飞;康朝阳;宋业恒;张伟风(Henan Key Laboratory of Quantum Materials and Quantum Energy,Center for Topological Functional Materials,School of Future Technology,Henan University,Kaifeng 475004,China)

机构地区：[1]Henan Key Laboratory of Quantum Materials and Quantum Energy,Center for Topological Functional Materials,School of Future Technology,Henan University,Kaifeng 475004,China

出　　处：《Chinese Physics B》2024年第11期378-383,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.12004099 and 11974099);the Zhongyuan Leading Talents,Plan for Leading Talent of Fundamental Research of the Central China in 2020;the Intelligence Introduction Plan of Henan Province in 2021(Grant No.CXJD2021008).

摘　　要：Nonvolatile electric-field control of the unique physical characteristics of topological insulators (TIs) is essential forthe fundamental research and development of practical electronic devices. Electrically tunable transport properties throughgating materials have been extensively investigated. However, the relatively weak and volatile tunability limits its practicalapplications in spintronics. Here, we demonstrate the nonvolatile electric-field control of Bi_(2)Te_(3) transport properties viaconstructing ferroelectric Rashba architectures, i.e., 2D Bi_(2)Te_(3)/a-In_(2)Se_(3) ferroelectric field-effect transistors. By switchingthe polarization states of a-In2Se3, the Fermi level, resistance, Fermi wave vector, carrier mobility, carrier density andmagnetoresistance (MR) of the Bi_(2)Te_(3) film can be effectively modulated. Importantly, a shift of the Fermi level towards aband gap with a surface state occurs as switching to a negative polarization state, the contribution of the surface state to theconductivity then increases, thereby increasing the carrier mobility and electron coherence length significantly, resulting inthe enhanced weak anti-localization (WAL) effect. These results provide a nonvolatile electric-field control method to tunethe electronic properties of TI and can further extend to quantum transport properties.

关 键 词：topological insulator weak anti-localization effect a-In_(2)Se_(3) electrical transport characteristics 

分 类 号：O469[理学—凝聚态物理]