Structural behavior and metallization of AsSbS_(3) at high pressure  

作　　者：Tian Qin Min Wu Kai Wang Ye Wu Haijun Huang 覃天;武敏;王凯;吴也;黄海军(School of Science,Wuhan University of Technology,Wuhan 430070,China;Shandong Key Laboratory of Optical Communication Science and Technology,School of Physics Science and Information Technology,Liaocheng University,Liaocheng 252000,China)

机构地区：[1]School of Science,Wuhan University of Technology,Wuhan 430070,China [2]Shandong Key Laboratory of Optical Communication Science and Technology,School of Physics Science and Information Technology,Liaocheng University,Liaocheng 252000,China

出　　处：《Chinese Physics B》2024年第11期436-440,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.42274123);the Special Construction Project Fund for Shandong Provincial Taishan Scholars.

摘　　要：The group V–VI semiconductor material getchellite (crystalline AsSbS_(3)) has garnered extensive attention due to itswonderful electronic and optical properties. The pressure engineering is one of the most effective methods to modulatecrystal structure and physical properties of semiconductor materials. In this study, the structural behavior, optical and electricalproperties of AsSbS_(3) under high pressure have been investigated systematically by in situ high-pressure experimentsfor the first time. The monoclinic structure of AsSbS_(3) remains stable up to 47.0 GPa without phase transition. The graduallattice contraction with increasing pressure results in a continuous narrowing of the bandgap then leads to pressure-inducedmetallization of AsSbS_(3) at 31.5 GPa. Our research presents a high-pressure strategy for tuning the crystal structure andphysical properties of AsSbS_(3) to expand its potential applications in electronic and optoelectronic fields.

关 键 词：AsSbS_(3) structural behavior pressure-induced metallization high pressure 

分 类 号：TN304[电子电信—物理电子学]