难熔合金硅化物涂层界面扩散致退化与阻扩散技术研究进展  

Research Progress on the Interface Diffusion Induced Degradation and Anti-diffusion Technology of Silicide Coatings on Refractory Alloys

作　　者：岳高 李宁 骆玉城 刘海浪[1] 乔彦强 郭喜平[3] YUE Gao;LI Ning;LUO Yucheng;LIU Hailang;QIAO Yanqiang;GUO Xiping(School of Mechanical and Electrical Engineering,Guilin University of Electronic Science and Technology,Guilin 541004,Guangxi,China;Guilin Fuda Co.,Ltd.,Guilin 541199,Guangxi,China;School of Materials Science,Northwestern Polytechnic University,Xi’an 710072,Shaanxi,China)

机构地区：[1]桂林电子科技大学机电工程学院,广西桂林541004 [2]桂林福达股份有限公司,广西桂林541199 [3]西北工业大学材料学院,陕西西安710072

出　　处：《中国钨业》2024年第3期10-19,56,共11页China Tungsten Industry

基　　金：广西自然科学基金(2021GXNSFBA196038);广西科技计划项目(桂科AD22035116);中国博士后科学基金项目(2022M710920)。

摘　　要：Si元素的快速内扩散与界面反应是导致高温下难熔合金表面硅化物涂层抗氧化性能退化并缩短其服役寿命的重要原因。本文综述了高温下难熔合金硅化物涂层界面Si元素的扩散原因、扩散行为、互扩散层的生长规律以及界面反应对硅化物涂层成分结构与抗氧化性能等的影响。同时还分别论述了元素改性、第二相掺杂以及界面阻扩散层等常见的阻扩散、抗退化技术的研究进展,探讨了不同材质界面阻扩散层的作用机理及其优缺点,最后对未来界面阻扩散层技术的发展与研究方向进行了展望。The intense inward diffusion and reaction of silicon(Si)at the silicide coating/refractory alloy interface significantly contribute to the degradation of the oxidation resistance and the shortened service life of silicide coatings at elevated temperatures.This study elucidates the mechanisms of Si diffusion and the growth behavior of the interdiffusion layer.Furthermore,the impact of Si reaction diffusion on the chemical composition,microstructure,and oxidation resistance of silicide coatings at high temperatures is examined.The research advancements,performance characteristics,operational mechanisms,advantages,and disadvantages of various Si diffusion inhibition methods-including elemental modification,second phase doping,and interfacial barrier layer technology-are discussed in detail.Finally,future research directions in the field of anti-diffusion layer technology are proposed.

关 键 词：难熔合金 硅化物涂层 界面互扩散 组织结构退化 阻扩散技术 

分 类 号：TG174.4[金属学及工艺—金属表面处理]