高精度MEMS差压传感器芯片的研究  

Research on high-precision MEMS differential pressure sensor chip

作　　者：杜成权 艾军 许明洋 魏壮壮 陈宇昕 DU Chengquan;AI Jun;XU Mingyang;WEI Zhuangzhuang;CHEN Yuxin(Chongqing Aurumsense Technology Co Ltd,Chongqing 401120,China)

机构地区：[1]重庆金芯麦斯传感器技术有限公司,重庆401120

出　　处：《传感器与微系统》2024年第12期28-31,共4页Transducer and Microsystem Technologies

基　　金：重庆市技术创新与应用发展专项重点项目(定向委托)(cstc2020jscx-dxwtBX0047)。

摘　　要：为应对市场对高精度MEMS差压传感器的需求,开展了压力传感器芯片关键技术研究。设计了一种压阻式差压传感器芯片,解决了硅—硅室温键合技术难题,开发了自主可控、稳定可靠、适合批量生产的工艺。采用体微机械加工技术和硅—硅键合技术制备了压力芯片晶圆,形成了满足实际应用需求的高精度差压MEMS压力传感器芯片。本文制备的压阻式差压传感器芯片压力测量范围覆盖0~14 MPa,线性误差(>10 kPa)<0.3%FS,温度滞后性<±0.05%FS,压力滞后性<0.05%FS,工作温度-40~+85℃,过载能力≥2倍FS,为压阻式压力芯片的设计与制作提供了一种可行的参考方案。Key technology of pressure sensor chips are studied to satisfy the market demand for high-precision MEMS differential pressure sensors.In this study,a piezoresistive differential pressure sensor chip is designed,and the difficult problem of siliconsilicon direct bonding technology at room temperature is solved,and the stable and reliable processes suitable for mass production is developed.In the manufacturing process,bulk micromachining technology and silicon-silicon direct bonding technology are used.And high-precision differential pressure MEMS pressure sensor chips are prepared,which to meet practical application needs.Piezoresistive differential pressure sensor chips are prepared that with a pressure measurement range of 0~14 MPa,linearity error(>10 kPa)<0.3%FS,temperature hysteresis<±0.05%FS,pressure hysteresis<0.05%FS,working temperature is-40~+85℃,overload capacity≥2 times FS.This research provides a feasible referred option for the design and production of piezoresistive pressure chips.

关 键 词：差压传感器 MEMS芯片 体微加工 KOH刻蚀 硅—硅键合 

分 类 号：TN305[电子电信—物理电子学] TP212[自动化与计算机技术—检测技术与自动化装置]