高压快速光控脉冲晶闸管的设计与实现  

Design and Implementation of High-Voltage High-Speed Optically Controlled Pulses Thyristor

作　　者：王凌云 刘宏伟[2] 袁建强[2] 谢卫平[2] 颜家圣[3] Wang Lingyun;Liu Hongwei;Yuan Jianqiang;Xie Weiping;Yan Jiasheng(College of Advanced Interdisciplinary Studies National University of Defense Technology,Changsha 410073 China;Institute of Fluid Physics China Academy of Engineering Physics,Mianyang 621900 China;Hubei TECH Semiconductors Co.Ltd,Xiangyang 441021 China)

机构地区：[1]国防科技大学前沿交叉学科学院,长沙410073 [2]中国工程物理研究院流体物理研究所,绵阳621900 [3]湖北台基半导体股份有限公司,襄阳441000

出　　处：《电工技术学报》2024年第23期7566-7576,共11页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金(51807185);装备发展部预研基金(614260501030117)。

摘　　要：为提升功率半导体开关器件的峰值功率及开通速度,将晶闸管与光导开关(PCSS)的优势进行结合,设计了一种高压光控脉冲晶闸管器件,实验及分析中发现光生载流子横向扩展速度较慢,易诱发电流集中效应,从而导致器件失效,开关的导通速度也难以进一步提升。在此基础上继续进行改进,提出大面积分散的阵列式门极结构,并采用激光二极管阵列、大电流脉冲强驱动等技术,大幅度提升了注入功率与均匀性。为了与阵列式门极图形匹配,设计了5×3阵列光源,使驱动的光功率峰值达到1 200W,波长为905nm。基于传统硅基μm级工艺平台,流片了23 mm开关芯片,完成了激光二极管阵列与开关的一体化封装。开关实现了工作电压8.5 kV、输出电流6 kA、开通峰值功率50 MW的工作特性,测试di/dt达到55 kA/μs,验证了该文设计的具有高工作电压、高隔离电压、快导通速度特性的新型光控脉冲晶闸管的有效性和可行性。此外,该文探讨了光控脉冲晶闸管结构提升脉冲性能的两种技术路径分别是提升驱动注入的峰值功率和均匀性。采用光控阵列式驱动和阵列式门极的技术路线,可有效地解决电控晶闸管、传统光控晶闸管(LTT)、单门极光控脉冲晶闸管的缺陷,显著提高器件的性能水平。This paper compares and analyzes the characteristics of existing high-power semiconductor devices.Among semiconductor switches,thyristors have the highest power capacity but the slowest conduction speed.On the other hand,photoconductive semiconductor switches(PCSS)have the fastest switch conduction speed and have optoelectronic isolation,but their auxiliary systems are relatively large and difficult to achieve a wide pulse width.If the advantages of the two types of switches can be organically combined,it is expected to significantly improve the performance of solid-state semiconductor pulse switches.Combining the advantages of thyristors and photoconductive switches,we designed a high-voltage optically controlled pulse thyristor device.This device is different from the traditional light triggered thyristors(LTT)with milliwatt weak light triggering and multi-stage amplifying gate structure.The developed optically controlled pulse thyristor uses strong light short pulse triggering and carried out laser injection verification tests under conditions such as 1000 W laser and 1 MW,and obtained preliminary verification experimental results.Experiments and simulation analysis found that the transverse expansion speed of photogenerated carriers is slow,which can easily induce the current concentration effect and cause device failure,and the conduction speed of the switch is also difficult to further improve.Based on this research,improvements and optimizations have been made.A large-area dispersed array gate structure is proposed,and technologies such as laser diode arrays and high-current pulse strong driving are used.First,a 53 dot matrix laser diode array was designed,driven by an electrical pulse with a voltage of 300 V,a current of 200 A,and a pulse width of 200 ns,achieving a laser with an energy of 250μJ,a wavelength of 905 nm,a pulse width of about 210 ns,and a peak power of about 1200 W.At the same time,based on the traditional silicon-basedμm-level process platform,a 23 mm switch chip was fabricated.The chip

关 键 词：脉冲晶闸管 光控 快速 阵列式门极 激光二极管阵列 

分 类 号：TM89[电气工程—高电压与绝缘技术] TM564