基于静态特性优化和非线性电容效应的IGBT行为模型改进  

Improvement of IGBT Behavioral Model Based on Static Characteristic Optimization and Nonlinear Capacitance Effect

作　　者：何婕玉 葛兴来[1] 王惠民 许智亮 龙远斌 He Jieyu;Ge Xinglai;Wang Huimin;Xu Zhiliang;Long Yuanbin(School of Electrical Engineering,Southwest Jiaotong University,Chengdu 611756,China)

机构地区：[1]西南交通大学电气工程学院,成都611756

出　　处：《半导体技术》2024年第12期1061-1071,共11页Semiconductor Technology

摘　　要：功率器件的快速开关行为是影响变流器电磁干扰程度的主要因素,器件开关暂态过程的准确建模对提高变流器可靠性至关重要。然而,不同栅压下饱和电流差异以及寄生电容的非线性特征显著影响器件行为模型的准确性。为此,提出了一种行为模型优化方法。基于校正函数构造对器件输出特性进行优化,以改善不同栅压的集电极电流匹配精度。其次,为改善不同温度下开关瞬态特性,提出一种非线性电容随温度变化的连续函数模型,并详细描述了拖尾电流及其对关断过程的影响。最终,利用双脉冲实验平台验证了所提模型的有效性。结果表明,改进模型阈值电压、米勒平台电压以及上升/下降时间等关键指标的误差分别降低了15%~25%、10%~20%和5%~10%。The fast-switching behaviors of power devices are the major factors affecting the electromagnetic interference level of the converter.Thus,accurate modelling of the power devices switching transient process is crucial to improve the reliability of converters.However,the saturation current difference under different gate voltages and the nonlinear characteristics of parasitic capacitance significantly affect the accuracy of the device behavior model.Therefore,a behavior model optimization method was proposed.Based on the construction of the correction function,the output characteristics of the device were optimized to improve the matching accuracy of the collector current with different gate voltages.For another,in order to improve the switching transient characteristics at different temperatures,a continuous function model of nonlinear capacitance variation with temperature was proposed.The trailing current and its effect on the switching process were described in detail.Finally,the availability of the proposed model was thoroughly verified by using the double-pulse experimental platform.The results show that the errors of the improved model are reduced by 15%-25%,10%-20% and 5%-10% respectively for the key parameters such as threshold voltage,Miller platform voltage and rise/fall time.

关 键 词：结温监测 行为模型 非线性电容 静态特性优化 连续函数模型 

分 类 号：TN386[电子电信—物理电子学]