基于生死单元技术的IGBT芯片焊料层失效演化机理  

Evolution Mechanism of Solder Layer Failure of IGBT Chip Based on Birth and Death Element Technology

作　　者：龙远斌 葛兴来[1] 王惠民 许智亮 何婕玉 Long Yuanbin;Ge Xinglai;Wang Huimin;Xu Zhiliang;He Jieyu(School of Electrical Engineering,Southwest Jiaotong University,Chengdu 611756,China)

机构地区：[1]西南交通大学电气工程学院,成都611756

出　　处：《半导体技术》2024年第12期1097-1105,共9页Semiconductor Technology

摘　　要：封装疲劳失效是导致绝缘栅双极型晶体管(IGBT)模块故障频发的重要因素,严重影响电力电子变流器可靠运行。焊料层退化演化过程复杂,亟需通过准确的模拟方法以明晰其失效机理。为此,提出了一种考虑累积损伤的IGBT芯片焊料层空洞退化演化方法。该方法基于生死单元技术的思路,通过协同仿真技术模拟芯片焊料层疲劳退化的演化过程,进一步评估焊料层的失效程度并预测模块的寿命。搭建功率循环测试平台验证所提方法的有效性,试验测得模块失效循环次数为50400次,基于所提方法模拟的失效循环次数为50865次,与试验的误差为0.923%。结果表明,该方法能够较好地模拟IGBT芯片焊料层的空洞退化过程并能准确预测模块的寿命。Packaging fatigue failure is an important factor leading to frequent failures of insulated gate bipolar transistor(IGBT)modules,which seriously affects the reliable operation of power electronic converters.The degradation evolution process of solder layer is complicated,so it is urgent to clarify its failure mechanism by accurate simulation method.Therefore,a degradation evolution method of IGBT chip solder layer cavities considering cumulative damage was proposed.Based on the idea of birth and death element technology,the evolution process of fatigue degradation of IGBT chip solder layer was simulated by using the co-simulation technology,the failure degree of the solder layer was further evaluated and the lifetime of the module was predicted.The power cycling test platform was built to verify the effectiveness of the proposed method.The number of module failure cycles measured in the experiment was 50400,and the number of failure cycles simulated based on the proposed method was 50865 with an error of 0.923% compared to the test result.The results show that the proposed method can simulate the cavity degradation process of the solder layer of IGBT chip well and predict the module life accurately.

关 键 词：绝缘栅双极型晶体管(IGBT) 焊料层退化 生死单元技术 协同仿真 功率循环测试 

分 类 号：TN406[电子电信—微电子学与固体电子学]