碲镉汞红外焦平面阵列图像传感器空间质子位移损伤及电离总剂量效应Geant4仿真  

Geant4 simulation of Hg_(1-x)Cd_(x)Te infrared focal plane array image sensor space proton displacement damage and total ionizing dose effects

作　　者：杨卫涛[1] 武艺琛 许睿明 时光 宁提[4] 王斌[1] 刘欢 郭仲杰 喻松林[4] 吴龙胜 Yang Wei-Tao;Wu Yi-Chen;Xu Rui-Ming;Shi Guang;Ning Ti;Wang Bin;Liu Huan;Guo Zhong-Jie;Yu Song-Lin;Wu Long-Sheng(Faulty of Integrated Circuit,Xidian University,Xi’an 710071,China;School of Automation and Information Engineering,Xi’an University of Technology,Xi’an 710048,China;School of Aerospace Science and Technology,Xidian University,Xi’an 710071,China;The 11th Research Institute of China Electronics Technology Group Corporation,Beijing 100015,China)

机构地区：[1]西安电子科技大学集成电路学部,西安710071 [2]西安理工大学自动化与信息工程学院,西安710048 [3]西安电子科技大学空间科学与技术学院,西安710071 [4]中国电子科技集团公司第十一研究所,北京100015

出　　处：《物理学报》2024年第23期97-106,共10页Acta Physica Sinica

基　　金：陕西省自然科学基础研究计划(批准号:2023-JC-QN-0015);中央高校基本科研业务费(批准号:XJSJ23049)资助的课题.

摘　　要：大面阵、高分辨率碲镉汞红外焦平面阵列图像传感器可用于航天遥感、高精度卫星成像等领域,我国下一代气象卫星将全部应用此类图像传感器.然而,空间高能质子会对碲镉汞红外焦平面阵列探测器造成位移损伤效应,同时亦会在其像素单元金属氧化物半导体(MOS)管引入电离总剂量效应.本文以近年来广泛应用于图像传感器的55 nm制造工艺碲镉汞红外焦平面阵列图像传感器为对象,基于超大面阵设计时所用的2 pixel×2 pixel基本像素单元,构建了Geant4仿真模型,并且进行了不同质子入射注量下的仿真研究,获得了不同注量下的位移损伤情况,包括非电离能量损失、离位原子数等.结果表明,空间高能质子累积注量为10^(13)cm^(–2)时,除了考虑碲镉汞红外焦平面阵列图像传感器位移损伤效应外,亦需关注其像素单元MOS管电离总剂量效应.与此同时,结合仿真结果对其空间应用环境中的损伤情况进行了初步评估.该研究可为未来超大面阵碲镉汞红外焦平面阵列图像传感器空间应用提供关键数据支撑.A large-format,high-resolution Hg_(1-x)Cd_(x)Te infrared focal plane array(IRFPA)image sensor can be used in aerospace remote sensing and high-precision satellite imaging.The next generation of meteorological satellites in China will all adopt this type of image sensor.However,space high-energy protons can cause displacement damage effects in Hg_(1-x)Cd_(x)Te IRFPA detectors and induce total ionizing dose(TID)effects in the pixel unit metal-oxide-semiconductor(MOS)transistors.This study focuses on a 55nm manufacturing process Hg_(1-x)Cd_(x)Te IRFPA sensor widely used in image sensors by using a 2 pixel×2 pixel basic pixel unit model for large-format arrays and constructing a Geant4 simulation model.Simulations are conducted for different proton irradiation fluences,including 10^(10),10^(11),10^(12)and 1013 cm^(–2).The results show the displacement damage under various fluences,including non-ionizing energy loss and displacement atom distribution.It is found that at a proton cumulative fluence of 1013 cm^(–2),in addition to considering the displacement damage effect in the Hg_(1-x)Cd_(x)Te IRFPA sensor,attention must also be paid to the TID effects on the MOS transistors in the pixel units.Additionally,this study provides a preliminary assessment of the damage conditions in the space environment based on simulation results.This study provides crucial data for supporting the space applications of future large-format Hg_(1-x)Cd_(x)Te IRFPA image sensors.

关 键 词：碲镉汞 红外焦平面 质子 GEANT4 位移损伤 电离总剂量 

分 类 号：TN215[电子电信—物理电子学] TP391.41[自动化与计算机技术—计算机应用技术] TP212[自动化与计算机技术—计算机科学与技术]