用于Si-APD的高能注入工艺优化研究  

Optimization Study of High-Energy Implantation Process for Si-APD

作　　者：刘祥晟 荆思诚 王晓媛 张明 陈慧蓉 潘建华 朱少立 LIU Xiangsheng;JING Sicheng;WANG Xiaoyuan;ZHANG Ming;CHEN Huirong;PAN Jianhua;ZHU Shaoli(Wuxi Zhongwei Microchips Co.,Ltd.,Wuxi 214035,China)

机构地区：[1]无锡中微晶园电子有限公司,江苏无锡214035

出　　处：《电子与封装》2024年第11期81-85,共5页Electronics & Packaging

摘　　要：雪崩区注入能量对硅基雪崩光电二极管性能影响极大,大束流高能注入工艺需要极高的设备成本。通过理论仿真计算和实验流片,调整雪崩区的注入能量和增加雪崩区的扩散时间,将注入能量从600 keV降低到390 keV,并在低成本的中束流离子注入机上进行对比验证。优化前后的器件性能都满足规范要求,参数上无明显差异。工艺方法简单可控,能有效降低注入设备成本,提升硅基雪崩光电二极管产能。The implantation energy of the avalanche region has the significant influence on the performance of silicon based avalanche photodiodes,and the large-beam high energy implantation process requires high equipment costs.Through theoretical simulation calculation and experimental wafer fabrication,the implantation energy of avalanche region is adjusted and the diffusion time of avalanche region is increased,and the implantation energy is reduced from 600 keV to 390 keV,and compared in the low cost of medium-beam ion implanter.The performance of the device before and after optimization meets the specification requirements,and there is no obvious difference in parameters.The process method is simple and controllable,which can effectively reduce the cost of equipment for ion implantation and improve the productivity of the silicon avalanche photodiode.

关 键 词：雪崩光电二极管 高能注入 反向击穿 

分 类 号：TN305.94[电子电信—物理电子学]