Preparation and characterization of Ti-Zr-V-Cu getter films  

作　　者：Yuchen Yang Tao Huang Na Wang Jia’ou Wang Saike Tian Sen Yue Haichang Duan Yongsheng Ma Yu Liu Jun Ren Xiaohua Peng Haiyi Dong Ping He 

机构地区：[1]Institute of High Energy Physics,Chinese Academy of Sciences,Beijing,100049,China [2]University of Chinese Academy of Sciences,Beijing,100049,China [3]Jiangnan University,Wuxi,214122,China

出　　处：《Radiation Detection Technology and Methods》2024年第2期1298-1305,共8页辐射探测技术与方法（英文）

基　　金：supported by High Energy Photon Source(HEPS),a major national science and technology infrastructure,and Xie Jialin Research Fund(No.E2546HU210);National Development and Reform Commission(2017)No.2173。

摘　　要：Introduction Non-evaporable getter is now widely employed in many accelerators to mitigate the resistive-wall effect of the Ti-Zr-V getter coated vacuum chambers in the next generation accelerators.Methods and discussions Quaternary Ti-Zr-V-Cu getter films were deposited by direct current(DC)magnetron sputtering.The DC/high frequency impedance and activation kinetics were investigated by four-probes/waveguide methods and in situ synchrotron radiation photoelectron spectroscopy(SRPES).Conclusions Compared to Ti-Zr-V films,Ti-Zr-V-Cu films showed better conductivity,which is beneficial to eliminate the resistive-wall effect.However,its initial activation temperature is above 200℃,and it needs to be activated at a higher temperature to achieve the required pumping performance.

关 键 词：GETTER NEG TiZrVCu IMPEDANCE CONDUCTIVITY SRPES Pumping speed 

分 类 号：O48[理学—固体物理]