Design of a wafer-scale ultra-thin silicon pixel detector prototype  

作　　者：Liangchenglong Jin Mingyi Dong Guowen Peng Lankun Li Shengjie Jin Yaxuan Li Anqing Wang Meng Wang Linghui Wu Yang Zhou 

机构地区：[1]University of South China,Hengyang,421001,China [2]State Key Laboratory of Particle Detection and Electronics,Institute of High Energy Physics,Chinese Academy of Sciences,Beijing,100049,China [3]Institute of High Energy Physics,Chinese Academy of Sciences,Beijing,100049,China [4]University of Chinese Academy of Sciences,Beijing,100049,China [5]Shandong University,Jinan,250013,China [6]Nankai University,Tianjin,300071,China [7]Zhengzhou University,Zhengzhou,450001,China

出　　处：《Radiation Detection Technology and Methods》2024年第3期1472-1479,共8页辐射探测技术与方法（英文）

基　　金：supported by the National Natural Science Foundation of China(No.U2032203).

摘　　要：Purpose In the upgrade study of the BESII inner drift chamber,a two-layer concentric cylindrical silicon pixel detector is proposed,which will be positioned between the beam pipe and the inner drift chamber.Method The detector consists of CMOS pixel sensors at wafer scale using chip stitching technology.The chips are thinned to a flexible thickness of about 50μm.PMI foams are used as spacers and auxiliary support between the adjacent layers,enabling the first layer of the detector to be put as close to the central beam pipe as possible.The detector structure has been optimized through finite-element analysis(FEA).Result The material budget of the detector has been reduced to about 0.077%Xo per layer.The maximum deformation of the chip edge has been controlled to±80μm after bending,and the roundness is about 100μm,which verifies the feasibility of the cylindrical detector prototype structure.In addition,the wire bonding process for the cylindrical silicon pixel detector has been tested and preliminarily validated.Conclusion This study validates the process flow for the development of large-area cylindrical detectors based on stitching technology,laying a foundation for the smooth progress of subsequent study.

关 键 词：Silicon pixel detector Cylindrical detector Finite element analysis 

分 类 号：O57[理学—粒子物理与原子核物理]