IGBT器件关断能力提升的参数筛选方法研究  

The Parameters Selection Methods for Turn-off Capability in IGBTs

作　　者：范迦羽 李恬晨 和峰 李学宝 崔翔 FAN Jiayu;LI Tianchen;HE Feng;LI Xuebao;CUI Xiang(State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources(North China Electric Power University),Beijing 102206,China;State Key Laboratory of Advanced Power Transmission Technology(Beijing Institute of Smart Energy),Beijing 102209,China)

机构地区：[1]新能源电力系统全国重点实验室(华北电力大学),北京102206 [2]先进输电技术国家重点实验室(北京智慧能源研究院),北京102209

出　　处：《华北电力大学学报（自然科学版）》2024年第6期58-66,共9页Journal of North China Electric Power University：Natural Science Edition

基　　金：国家自然科学基金资助项目(52225701).

摘　　要：绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)器件内部通过并联大量芯片保证其关断能力,当并联芯片的参数分散性较大时,器件的关断能力会不可避免的退化。因而,研究IGBT器件关断能力提升的参数筛选方法非常重要。为此,本文首先分析了并联两IGBT芯片关断失效的特征及关键的影响因素,并首次给出了并联IGBT芯片动态闩锁失效的电压电流波形。波形表明,关断重分配的电流不均令并联芯片在关断时承受不同应力,从而导致IGBT器件的关断能力退化。此外,上述过程受芯片阈值电压,转移特性曲线等诸多参数影响,因此需要通过多参数筛选以提升器件的关断能力。所以,本文总结了300组芯片并联关断的实验结果,研究了并联芯片参数差异与关断均流的关系,并提出并联芯片的关断均流的参数筛选方法,从而提升器件的关断能力。实验结果表明,通过筛选栅极阈值电压、转移特性曲线以及等效跨导可以有效保证芯片在1.8倍额定电流下的关断电流差峰值小于10%,验证了所提方法的有效性。IGBT devices ensure their turn-off capability by connecting a large number of chips in parallel.However,when the parameters of parallel chips vary significantly,the turn-off capability of the devices inevitably degrades.Thus,it is significant to investigate the parameters selection methods for the turn-off capability enhancement in the IGBT devices.In this paper,we firstly analyze features and key factors in turn-off failure for two parallel IGBT chips,and demonstrate the waveforms in dynamic latch-up failures for the first time.The waveforms indicate that uneven current redistribution during turn-off results in different stress levels being applied to the parallel chips,which subsequently leads to degradation in the turn-off capability of IGBT devices.Additionally,this process is significantly influenced by various parameters,including the threshold voltage and transfer characteristic curves of the chips,so it is necessary to improve the turn-off capability by multi-parameters selection.Therefore,we summarize the experimental results from 300 sets of parallel chip turn-off tests,and investigates the relationship between variations in parallel chip parameters and current sharing during turn-off process.Lastly,we propose the parameters selection method for the current sharing during the turn-off period,which can improve the turn-off capability in the IGBT devices.Experimental results show that the threshold voltage,transfer characteristics curves and the equivalent transconductance are necessary.Based on the proposed method,the peak value of the current mismatch at 1.8 times rated current can be effectively reduced to less than 10%,which verifies the effectiveness of this method.

关 键 词：并联IGBT芯片 关断失效特征 动态闩锁失效 关断电流重分配 参数筛选方法 

分 类 号：TM23[一般工业技术—材料科学与工程]