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作 者:马可贞 张靖松 MA Ke-Zhen;ZHANG Jing-Song(Dingxu(Suzhou)Micro Control Technology Co.,Ltd,Suzhou 215000,China;School of Materials Science and Chemistry,Southwest University of Science and Technology,Mianyang 621000,China)
机构地区:[1]顶旭(苏州)微控技术有限公司,苏州215000 [2]西南科技大学材料与化学学院,绵阳621000
出 处:《四川大学学报(自然科学版)》2024年第6期24-30,共7页Journal of Sichuan University(Natural Science Edition)
基 金:顶旭(苏州)微控技术有限公司内部立项基金。
摘 要:基于微机电系统的氧化钇稳定氧化锆(YSZ)薄膜氧气传感器因其小型化、集成化优势而成为新一代氧气传感器的最佳技术路线.集成化小型化的关键在于获取工作温度低,离子电导率高的YSZ薄膜.本工作探究了脉冲激光沉积技术在降低YSZ薄膜工作温度和提高其离子电导率方面的应用;通过在高真空下采用脉冲激光沉积技术,多次沉积与原位氧退火交替实施获取了厚度约为200 nm的YSZ薄膜,分析了沉积与退火温度对薄膜结构、成分、电学性能和氧气气敏性能的影响.此外,本文还验证了氧离子在氧空位中传输是薄膜的主要传导机制,且具有较低的氧离子激活能0.227 eV,最后进行了氧气敏感测试.结果表明:采用PLD法可将YSZ薄膜的工作温度从1073 K降低至873 K,这为基于MEMS的微型YSZ薄膜氧气传感器的研发进行了有效探索.The YSZ thin film oxygen sensors based on MEMS is the first choice of oxygen sensor because of its miniaturization and integration advantages.It is the key of integration and miniaturization to effectively re⁃duce the working temperature of the YSZ thin films and improve the ionic conductivity.In this paper,the YSZ thin films were prepared by pulsed laser deposition technology in high vacuum.Until the thickness of the YSZ thin films reaches 200 nm by alternating experiment of deposition and in-situ oxygen annealing.We stud⁃ied the effects of deposition and annealing temperature on the structure,composition,electrical properties and oxygen sensing properties of the YSZ thin films.The results show that the cubic phase diffraction peak inten⁃sity of YSZ thin films and the ionic conductivity increases gradually with the increase of annealing tempera⁃ture.The YSZ thin films have the highest ionic conductivity and lower activation energy,which are 2.53 S/cm(Tm=873 K)and 0.227 eV,respectively,when the temperatures reach 753 K.The results show that the working temperature of YSZ thin film can be reduced from 1073 K to 873 K using PLD method,which effectively explores the development of micro YSZ thin film oxygen sensors based on MEMS.
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