基于掺铒铌酸锂薄膜的集成波导放大器(特邀)  

Integrated Erbium-Doped Lithium Niobate Thin-Film Waveguide Amplifier for Optical Communication Networks(Invited)

作　　者：蔡明璐 陈建平[1] 吴侃[1] Cai Minglu;Chen Jianping;Wu Kan(State Key Laboratory of Advanced Optical Communication Systems and Networks,Department of Electronic Engineering,Shanghai Jiao Tong University,Shanghai 200240,China)

机构地区：[1]上海交通大学电子工程系区域光纤通信网与新型光通信系统国家重点实验室,上海200240

出　　处：《激光与光电子学进展》2024年第19期67-73,共7页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(61922056)。

摘　　要：掺铒铌酸锂薄膜可兼具增益性能以及铌酸锂的电光、非线性特性,是具有单片全集成潜质的光电子平台。本研究旨在开发基于掺铒铌酸锂薄膜的集成波导放大器,以满足光通信网络中对紧凑、高效光放大器的需求,同时探索片上增益理论并开展实验验证。通过电子束光刻结合干法刻蚀的制备工艺,实现了传播损耗低至0.18 dB/cm的铌酸锂波导制备。通过1484 nm双向泵浦方案,10 cm长的集成波导放大器可实现62.76 dB的信号增强与22.26 dB的净增益,实验表征结果可与增益仿真结果匹配。这项研究为进一步优化基于掺铒铌酸锂薄膜的集成光学放大器及扩展其在光通信领域的应用提供了重要的实验基础和理论支持。Erbium-doped lithium niobate thin films offer a promising optoelectronic platform by combining the gain performance with the electro-optic and nonlinear properties of lithium niobate,potentially enabling single-chip full integration.This study aims to develop an integrated waveguide amplifier based on erbium-doped lithium niobate thin films to meet the growing demand for compact and efficient optical amplifiers in optical communication networks.This study explores on-chip gain theory and conduct experimental validation.A lithium niobate waveguide with a propagation loss as low as 0.18 dB/cm was prepared by combining electron beam lithography with dry etching.Employing a 1484-nm bidirectional pumping scheme,a 10-cm-long integrated waveguide amplifier demonstrated a signal enhancement of 62.76 dB and a net gain of 22.26 dB.The experimental characterization results closely align with the gain simulation outcomes.This research provides a critical experimental basis and theoretical support for further optimizing integrated optical amplifiers based on erbium-doped lithium niobate thin films and broadening their applications in optical communication.

关 键 词：集成光学 掺铒铌酸锂薄膜 波导放大器 净增益 

分 类 号：TN256[电子电信—物理电子学]