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作 者:刘启发[1,2] 刘珂 李皖晴 郭寒 杨宇潇 朱刚毅 Liu Qifa;Liu Ke;Li Wanqing;Guo Han;Yang Yuxiao;Zhu Gangyi(School of Telecommunication and Information Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210003,Jiangsu,China;State Key Laboratory of Advanced Optical Communication Systems and Networks,Shanghai Jiao Tong University,Shanghai 200240,China;Portland Institute,Nanjing University of Posts and Telecommunications,Nanjing 210023,Jiangsu,China)
机构地区:[1]南京邮电大学通信与信息工程学院,江苏南京210003 [2]上海交通大学区域光纤通信网与新型光通信系统国家重点实验室,上海200240 [3]南京邮电大学波特兰学院,江苏南京210023
出 处:《光学学报》2024年第20期157-165,共9页Acta Optica Sinica
基 金:区域光纤通信网与新型光通信系统国家重点实验室(上海交通大学)开放基金(2023GZKF018);发光与应用国家重点实验室基金(SKLA-2021-04);江苏省研究生科研创新计划(KYCX22_0945)。
摘 要:提出了一种基于表面场分布调控和多孔氮化镓(Ga N)分布式布拉格反射器(DBR)的蓝光Ph C面发射激光器,通过在Ga N表面引入二氧化钛(TiO_(2))Ph C层以及在下部引入多孔Ga N/Ga N DBR结构,实现具有高限制因子、高谐振品质因数和基于DBR增强光功率的激光谐振腔结构。采用严格耦合波分析(RCWA)、平面波方程(PWE)和时域有限差分(FDTD)等仿真方法,研究了Ph C结构和层结构参数对激光器性能的影响,最终完成了对光场模式分布的强约束与调节控制,实现了大于8%的Ph C层限制因子、38 cm^(-1)的辐射常数和约2 W/A的斜率效率。此外,较高的品质因数和限制因子使激光器具有了低至217 cm^(-1)增益阈值。Objective Photoniccrystal surfaceemitting lasers(PCSELs)are characterized by single longitudinal mode,high beam quality,small divergence angle,and narrow linewidth.Compared with traditional edgeemitting lasers(EELs)or vertical cavity surfaceemitting lasers(VCSELs),PCSELs offer advantages in beam quality,highspeed modulation,and power performance.Their unique photon confinement properties allow for a highquality,singlemode beam at the watt scale by increasing the gain area of the active region.This makes them become ideal future laser sources,combining the benefits of GaN materials and blue lasers to achieve high power output with excellent beam quality under singledevice,singlemode conditions.Consequently,they have attracted significant attention.In traditional GaNPCSEL designs,the holes of the photonic crystal(PhC)are typically buried near the active layer to enhance the optical field confinement factor.However,even with this approach,the confinement factor remains limited,and the complex fabrication process involved in burying PhCs can lead to structural disorder,weakening the photonic crystal resonance effect and coupling strength.Furthermore,the refractive index limitations of AlGaN and the highquality epitaxial growth requirements make GaN material systems less amenable to efficient distributed Bragg reflectors(DBRs)and effective optical field confinement layers compared to GaAs and InPbased systems.As a result,highperformance GaNbased surfaceemitting lasers have faced challenges in advancement.Therefore,we present a theoretical simulation of blue light PCSELs,which is expected to provide valuable insights for practical applications.Methods The GaNPCSEL laser designed in this study utilizes a unique combination of the photonic crystal layer and the DBR/AlGaN composite confinement layer,as shown in Fig.1.The design of the PCSEL laser gain cavity is based on layer parameters of traditional GaN active systems.Initially,we use the plane wave expansion(PWE)method to obtain the TEmode photonic crystal cavity energ
关 键 词:多孔氮化镓 场分布调控 限制因子 品质因数 斜率效率 增益阈值 蓝光PhC面发射激光器
分 类 号:TN248[电子电信—物理电子学]
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