Theoretical Research on a D-Band Traveling Wave Extended Interaction Amplifier  

作　　者：Zhongtao CUI Xuesong YUAN Xiaotao XU Dongrui CHEN Yifan ZU Matthew Thomas Cole Qingyun CHEN Yang YAN 

机构地区：[1]Terahertz Science and Technology Key Laboratory of Sichuan Province,School of Electronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China [2]Department of Electronic and Electrical Engineering,University of Bath,Bath BA27AY,UK

出　　处：《Chinese Journal of Electronics》2024年第6期1487-1491,共5页电子学报（英文版）

基　　金：supported by the National Key Research and Development Program of China(Grant No.2019YFA0210202);the Sichuan Science and Technology Program(Grant No.2021YJ0096);the National Natural Science Foundation of China(Grant No.61771096)。

摘　　要：A traveling-wave,extended interaction amplifier is herein investigated for use in millimeter-wave and terahertz amplification sources.By placing engineered extended interaction cavities between the traveling wave structures,higher gain is obtained with a shorter high frequency circuit,compared with conventional traveling wave tubes architectures.The bandwidth of the device is significantly increased relative to extended interaction klystrons.A Dband beam wave interaction circuit of 26 mm long has been designed.Particle-in-cell simulations at 21.5-kV operating voltage,0.3-A beam current,and 5-mW input power show that the maximum output power reaches 351 W,with a gain of 48.4 dB and 3-dB bandwidth of 1.42 GHz.

关 键 词：D-band Extended interaction klystron Traveling wave tube 

分 类 号：TN722[电子电信—电路与系统]