氧化铪基铁电薄膜的研究进展  

Research Progress on Hafnium Oxide Based Ferroelectric Thin Films

作　　者：秦羽铖 蒋昊岚 闵月淇 谢文钦 张静[2] 谢亮[1] Qin Yucheng;Jiang Haolan;Min Yueqi;Xie Wenqin;Zhang Jing;Xie Liang(College of Science,North China University of Technology,Beijing 100144,China;School of Information Technology,North China University of Technology,Beijing 100144,China)

机构地区：[1]北方工业大学理学院,北京100144 [2]北方工业大学信息学院,北京100144

出　　处：《微纳电子技术》2024年第12期28-38,共11页Micronanoelectronic Technology

摘　　要：氧化铪(HfO_(2))基铁电薄膜拥有稳定、独特的铁电极化,且与CMOS集成电路制造工艺的高度兼容性,成为下一代高密度、非易失性铁电存储器的重要候选材料,因而备受关注。首先探讨了HfO_(2)基铁电薄膜的不同制备方法,分析了脉冲激光沉积法、磁控溅射法、原子层沉积法等制备方法的特点。其次,阐述了退火处理、唤醒效应、底电极等因素对该类薄膜铁电性的影响,并对其铁电性的起源进行了介绍。此外,总结了HfO_(2)基铁电薄膜在铁电存储器、铁电隧道结、铁电场效应晶体管等领域的应用研究成果。最后对HfO_(2)基铁电薄膜研究中存在的问题及发展方向进行了总结与展望。Hafnium oxide(HfO_(2))-based ferroelectric thin films possess stable and unique ferroelectric polarization,and are highly compatible with CMOS integrated circuit fabrication processes.As a result,they have attracted significant attention as potential materials for nextgeneration high-density,non-volatile ferroelectric memories.Firstly,different preparation methods for HfO_(2)-based ferroelectric thin films are briefly overviewed and the characteristics of methods such as pulsed laser deposition,magnetron sputtering,and atomic layer deposition are analyzed.Furthermore,the influences of factors such as annealing,wake-up effects,and bottom electrodes on the ferroelectric properties of these films are elucidated,along with an introduction to the origin of their ferroelectric behavior.Additionally,the research achievements regarding the application of HfO_(2)-based ferroelectric thin films in ferroelectric memories,ferroelectric tunnel junctions,and ferroelectric field-effect transistors are summarized.Finally,both the existing problems and future directions in the research of HfO_(2)-based ferroelectric thin films are summarized and prospected.

关 键 词：氧化铪(HfO_(2))薄膜 铁电性 铁电正交相 铁电性起源 铁电存储器 

分 类 号：TN384[电子电信—物理电子学]