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作 者:Yi-lei Li Xu-jia Liu Yun-biao Wang Ying Liu Rui-hong Liu Hui-ying Mu Ying-juan Hao Xiao-jing Wang Fa-tang Li
机构地区:[1]Hebei Key Laboratory of Photoelectric Control on Surface and Interface,College of Science,Hebei University of Science and Technology,Shijiazhuang,050018,China [2]Key Laboratory of Theoretical and Computational Photochemistry,Ministry of Education,College of Chemistry,Beijing Normal University,Beijing,100875,China
出 处:《Green Energy & Environment》2024年第12期1847-1856,共10页绿色能源与环境(英文版)
基 金:financially supported by the Natural National Science Foundation of China(22178084);the Natural Science Foundation for Distinguished Young Scholars of Hebei Province(No.B2015208010);Fundamental Research Funds for the Central Universities;the Foundation for Innovative Research Groups of the Natural Science Foundation of Hebei Province(No.B2021208005);National Key R&D Program of China(2022YFE0101800).
摘 要:Adjusting the interfacial transport efficiency of photogenerated electrons and the free energy of hydrogen adsorption through interface engineering is an effective means of improving the photocatalytic activity of semiconductor photocatalysts.Herein,hollow ZnS/NiS nanocages with ohmic contacts containing Zn vacancy(V_(Zn)-ZnS/NiS)are synthesized using ZIF-8 as templates.An internal electric field is constructed by Fermi level flattening to form ohmic contacts,which increase donor density and accelerate electron transport at the V_(Zn)-ZnS/NiS interface.The experimental and DFT results show that the tight interface and V_(Zn) can rearrange electrons,resulting in a higher charge density at the interface,and optimizing the Gibbs free energy of hydrogen adsorption.The optimal hydrogen production activity of V_(Zn)-ZnS/NiS is 10,636 μmol h^(-1) g^(-1),which is 31.9 times that of V_(Zn)-ZnS.This study provides an idea for constructing sulfide heterojunctions with ohmic contacts and defects to achieve efficient photocatalytic hydrogen production.
关 键 词:Zn vacancy Ohmic contact Donor density Hollow nanocages Photocatalytic H_(2)production
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