Zn_(1.1)Ga_(1.8)Ge_(0.1)O_(4)透明陶瓷烧结过程的动力学研究  

Kinetic Study on the Sintering Process of Zn_(1.1)Ga_(1.8)Ge_(0.1)O_(4)Transparent Ceramics

作　　者：汪开强 杨康 靖正阳 陈博文 涂兵田[1] 王皓[1] WANG Kaiqiang;YANG Kang;JING Zhengyang;CHEN Bowen;TU Bingtian;WANG Hao(State Key Lab of Advanced Technology for Materials Synthesis and Processing,Wuhan University of Technology,Wuhan 430070,China)

机构地区：[1]武汉理工大学材料复合新技术国家重点实验室,武汉430070

出　　处：《人工晶体学报》2024年第11期1972-1980,共9页Journal of Synthetic Crystals

基　　金：国家重点研发计划(2023YFB3812000);国家自然科学基金(52272072);湖北隆中实验室自主创新研究项目(2022ZZ-13)。

摘　　要：尖晶石型Zn_(1.1)Ga_(1.8)Ge_(0.1)O_(4)是优秀的介电和长余辉基体材料,透明陶瓷的制备有望扩大其应用领域。本文对Zn_(1.1)Ga_(1.8)Ge_(0.1)O_(4)陶瓷的无压烧结动力学进行研究,结果表明Zn_(1.1)Ga_(1.8)Ge_(0.1)O_(4)陶瓷烧结过程的致密化和晶粒生长均由O 2-晶界扩散控制,其烧结中期的致密化活化能为(426±35)kJ/mol,烧结末期的晶粒生长活化能为(439±14)kJ/mol。通过将烧结工艺参数控制在“烧结窗口”中,获得了良好的无压烧结体显微结构。经过高温热等静压处理后得到Zn_(1.1)Ga_(1.8)Ge_(0.1)O_(4)透明陶瓷,其光学透过范围为0.3~9μm,在2.5μm处直线透过率达到81.2%。Spinel-type Zn_(1.1)Ga_(1.8)Ge_(0.1)O_(4)is an excellent host material for dielectric and long-persistent luminescent ceramics.It is helpful to expand application when the transparent ceramics is fabricated.In this paper,the pressureless sintering kinetics of Zn_(1.1)Ga_(1.8)Ge_(0.1)O_(4)ceramics were studied.The results show that both densification and grain growth are controlled by the grain boundary diffusion of O 2-.The activation energy for densification in the intermediate sintering stage is determined as(426±35)kJ/mol,while the activation energy for grain growth in the final sintering stage is calculated as(439±14)kJ/mol.When the combination of sintering parameters is optimized to enter into the so-called“sintering window”,the favorable microstructure of the pressureless-sintered body is obtained.After hot isostatic pressed at high temperature,Zn_(1.1)Ga_(1.8)Ge_(0.1)O_(4)transparent ceramics with optical transmission ranging from 0.3μm to 9μm and in-line transmittance of 81.2%at 2.5μm are prepared.

关 键 词：Zn_(1.1)Ga_(1.8)Ge_(0.1)O_(4)尖晶石 透明陶瓷 烧结路径 致密化活化能 晶粒生长活化能 光学透明性 

分 类 号：O734[理学—晶体学]