基于波导倏逝耦合的硅基片上量子点激光器的仿真设计  

Quantum dot lasers on silicon substrates through evanescent coupling

作　　者：肖茗月 何希文 周琛 马德岳 李儒新[2,4] 周治平 XIAO Mingyue;HE Xiwen;ZHOU Chen;MA Deyue;LI Ruxin;ZHOU Zhiping(School of Microelectronics,Shanghai University,Shanghai 201800,China;State Key Laboratory of High Field Laser Physics,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;Aerospace Laser Technology and Systems Department,Shanghai Institute of Optics and Fine Mechanics,Chinese Academy of Sciences,Shanghai 201800,China;School of Physical Science and Technology,ShanghaiTech University,Shanghai 201210,China;Hangzhou Aijie Optoelectronic Technology Co.Ltd.,Hangzhou 310000,China;School of Electronics,Peking University,Beijing 100871,China)

机构地区：[1]上海大学微电子学院,上海201800 [2]中国科学院上海光学精密机械研究所强场激光物理国家重点实验室,上海201800 [3]中国科学院上海光学精密机械研究所空天激光技术与系统部,上海201800 [4]上海科技大学物质科学与技术学院,上海201210 [5]杭州爱杰光电科技有限公司,浙江杭州310000 [6]北京大学信息科学技术学院,北京100871

出　　处：《红外与激光工程》2024年第11期102-111,共10页Infrared and Laser Engineering

基　　金：国家自然科学基金项目(62035001)。

摘　　要：针对目前硅基光电子芯片缺失片上光源这一问题,设计了一种基于波导倏逝耦合的硅基片上量子点激光器。整体结构基于绝缘体上硅(Silicon on Insulator,SOI)平台引入倏逝波耦合结构来完成量子点增益芯片和波导间的耦合,利用布拉格光栅形成激光腔体来完成光放大和波长选择功能。通过Lumerical仿真软件对O波段硅基片上光源的锥形(taper)耦合器结构和布拉格光栅结构进行了优化。结果表明,长142μm的锥形耦合器具有最高的耦合效率;长于30μm的锥形光斑塑形波导可以使光束以更低损耗在片上传输;优化后的布拉格光栅在波导两端的长度为110μm和240μm,分别实现了40%和90%的反射率。两段布拉格光栅形成谐振腔,放大并选择出1.31μm波长。文中设计显著提高了硅基片上光源整体的发光效率并降低了成本,实现了超过98%的耦合效率,且与CMOS(Complementary Metal Oxide Semiconductor)工艺兼容。相关研究结果可为后续工艺设计和实验验证提供数据支持。Objective The integration of on-chip silicon-based light sources has been a critical challenge in addressing the absence of light sources in silicon-based optoelectronic chips.This integration is essential for enhancing the power output of light sources on silicon-based optoelectronic chips,thereby increasing the chip's speed and capacity.However,traditional integration methods such as end-face coupling suffer from low efficiency due to issues like surface roughness and alignment difficulties,which are difficult to mitigate.Therefore,this paper proposes a method for light source integration using evanescent coupling,which can improve light source coupling efficiency and increase the output power of silicon-based on-chip light sources.Furthermore,traditional silicon-based light source integration typically employs quantum well lasers,whereas this study designs an appropriate quantum dot laser,which offers advantages such as lower threshold current and more stable temperature tolerance.These benefits enhance the overall coupling efficiency and output power of the siliconbased on-chip quantum dot laser.Methods Using Lumerical simulation software,we optimized the evanescent coupling waveguide structure and the Bragg grating waveguide structure for an O-band silicon-based on-chip light source.At a wavelength of 1.31μm,the tapered waveguide structure designed for evanescent coupling achieved a coupling efficiency of over 98%for widths of 0.68μm,0.7μm,and 0.75μm(Fig.4).The study primarily analyzed the impact of length on coupling efficiency.Additionally,we designed two segments of Bragg gratings to form a resonant cavity,with the paper focusing on the effects of duty cycle,etch depth,and grating length on reflectivity(Fig.7).This structure can achieve reflectivities of 40%and 90%at the three specified waveguide widths,allowing for the amplification and selection of light at a wavelength of 1.31μm(Fig.8).Results and Discussions Through waveguide mode analysis,a waveguide layer thickness of 220 nm was selected,with w

关 键 词：硅基光电子学 硅基片上光源 倏逝波耦合 布拉格光栅 

分 类 号：TN256[电子电信—物理电子学] TN252