Oxygen vacancy induced carrier mobility enhancement in nano-multilayered ZrO_(2):Y_(2)O_(3)/SrTiO_(3) thin films for non-volatile memory devices  

YSZ/STO纳米多层膜在忆阻器中的应用与氧空位诱导的载流子迁移率提升

作　　者：YANG Ze-ou HUANG Xiao-zhong HU Hai-long MA Bing-yang SHANG Hai-long YUE Jian-ling 杨泽欧;黄小忠;胡海龙;马冰洋;尚海龙;岳建岭(State Key Laboratory of Powder Metallurgy,Central South University,Changsha 410083,China;Research Institute of Aerospace Technology,Central South University,Changsha 410083,China;School of Mechanical Engineering,Shanghai Dianji University,Shanghai 200240,China)

机构地区：[1]State Key Laboratory of Powder Metallurgy,Central South University,Changsha 410083,China [2]Research Institute of Aerospace Technology,Central South University,Changsha 410083,China [3]School of Mechanical Engineering,Shanghai Dianji University,Shanghai 200240,China

出　　处：《Journal of Central South University》2024年第10期3674-3687,共14页中南大学学报（英文版）

基　　金：Projects(2023JJ30690,2022JJ30722)supported by the Natural Science Foundation of Hunan Province,China;Project(kq2202093)supported by the Natural Science Foundation of Changsha,China;Project(SKL202202SIC)supported by the Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure,China。

摘　　要：The influence of oxygen vacancy-dominated carrier mobility on the performance of memristors has attractedconsiderable attention.The device’s carrier mobility can be significantly improved by forming a nano-multilayeredheterostructure when the individual layer thickness is below a critical value.In this work,Pt/[ZrO_(2):Y_(2)O_(3)(YSZ)/SrTiO_(3)(STO)]n/Nb:SrTiO_(3)(NSTO)memristive devices were configurated through laser pulse deposited YSZ/STO nanomultilayeredactive layer with both Pt and NSTO acting as top and counter electrodes.Specifically,the Pt/[YSZ/STO]5/NSTO device with five consecutive layers of YSZ/STO thin film shows superior memristor performance,and itscorresponding carrier mobility presents a significantly enhanced value compared to that of other periodic numbers ofYSZ/STO composed memristive devices.This can be attributed to the increase of oxygen vacancy concentration in thedevice,as evidenced by both experimental results and theoretical analysis.This work provides a significant approach inimproving the performance of memristor dominated by oxygen vacancy transporting mechanism.氧空位主导的载流子迁移率对忆阻器性能的影响引起了广泛关注。当单层厚度低于临界值时,通过形成纳米多层异质结构可以显著提高器件的载流子迁移率。在本研究中,采用激光脉冲技术在NSTO底电极上沉积YSZ/STO纳米多层膜活性层,进而在其上制备Pt顶电极构筑了Pt/[YSZ/STO]_(n)/NSTO忆阻器。研究发现,采用五周期YSZ/STO薄膜作为活性层的Pt/[YSZ/STO]_(5)/NSTO器件显示出优异的忆阻性能,其相应的载流子迁移率相比于其他周期数YSZ/STO纳米多层膜构筑的忆阻器有显著提高。实验结果和理论分析都表明这是由于器件中氧空位浓度的显著增加所致。本研究工作为今后改善基于氧空位传输型忆阻器的性能提供了重要参考。

关 键 词：YSZ/STO nano-multilayered thin film MEMRISTOR oxygen vacancy carrier mobility 

分 类 号：TN60[电子电信—电路与系统] TB383.2[一般工业技术—材料科学与工程]