Performance Characterization of Visible Light Communication Based on GaN High-Voltage LED/PD  

作　　者：LU Meixin JIANG Zitong FANG Li YAN Yiqun YAN Jiabin 

机构地区：[1]Nanjing University of Posts and Telecommunications,Nanjing 210003,China

出　　处：《ZTE Communications》2024年第4期46-52,共7页中兴通讯技术（英文版）

基　　金：This work is jointly supported by the National Natural Science Foundation of China under Grant Nos.62004103,62105162,62005130,61827804,62274096,and 61904086;the Natural Science Foundation of Jiangsu Province under Grant No.BK20200743;the Natural Science Foundation of the Higher Education Institutions of Jiangsu Province under Grant No.22KJA510003;the Natural Science Foundation of Nanjing University of Posts and Telecommunications under Grant No.NY223084;the“111”project under Grant No.D17018;the Postgraduate Research&Practice Innovation Program of Jiangsu Province under Grant No.SJCX230257.

摘　　要：While considerable research has been conducted on the structural principles,fabrication techniques,and photoelectric properties of high-voltage light-emitting diodes(LEDs),their performance in light communication remains underexplored.A high-voltage seriesconnected LED or photodetector(HVS-LED/PD)based on the gallium nitride(GaN)integrated photoelectronic chip is presented in this paper.Multi-quantum wells(MQW)diodes with identical structures are integrated onto a single chip through wafer-scale micro-fabrication techniques and connected in series to construct the HVS-LED/PD.The advantages of the HVS-LED/PD in communication are explored by testing its performance as both a light transmitter and a PD.The series connection enhances the device's 3 dB bandwidth,allowing it to increase from 1.56 MHz to a minimum of 2.16 MHz when functioning as an LED,and from 47.42 kHz to at least 85.83 kHz when operating as a PD.The results demonstrate that the light communication performance of HVS-LED/PD is better than that of a single GaN MQW diode with bandwidth and transmission quantity,which enriches the research of GaN-based high-voltage devices.

关 键 词：high-voltage LEDs high-voltage PDs GaN MQW diode array communication characterization visible light communication 

分 类 号：TN929.1[电子电信—通信与信息系统] TN312.8[电子电信—信息与通信工程]