Precise mode control of mid-infrared high-power laser diodes using on-chip advanced sawtooth waveguide designs  

作　　者：Jianmei Shi Chengao Yang Yihang Chen Tianfang Wang Hongguang Yu Juntian Cao Zhengqi Geng Zhiyuan Wang Haoran Wen Hao Tan Yu Zhang Dongwei Jiang Donghai Wu Yingqiang Xu Haiqiao Ni Zhichuan Niu 

机构地区：[1]Key Laboratory of Optoelectronic Materials and Devices,Institute of Semiconductors,Chinese Academy of Sciences,Beijing,China [2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing,China [3]International Quantum Academy,Shenzhen,China [4]Hefei National Laboratory,Hefei,China

出　　处：《High Power Laser Science and Engineering》2024年第4期41-47,共7页高功率激光科学与工程（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.62204238);the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0300801);‘Announce the list and take charge’of the Major Special Plan of Science and Technology in Shanxi Province(Grant No.202201030201009);the National Key R&D Program of China(Grant No.2019YFA0705203)。

摘　　要：Power scaling in conventional broad-area(BA)lasers often leads to the operation of higher-order lateral modes,resulting in a multiple-lobe far-field profile with large divergence.Here,we report an advanced sawtooth waveguide(ASW)structure integrated onto a wide ridge waveguide.It strategically enhances the loss difference between higher-order modes and the fundamental mode,thereby facilitating high-power narrow-beam emission.Both optical simulations and experimental results illustrate the significant increase in additional scattering loss of the higher-order modes.The optimized ASW lasers achieve an impressive output power of 1.1 W at 4.6 A at room temperature,accompanied by a minimal full width at half maximum lateral divergence angle of 4.91°.Notably,the far-field divergence is reduced from19.61° to 11.39° at the saturation current,showcasing a remarkable 42%improvement compared to conventional BA lasers.Moreover,the current dependence of divergence has been effectively improved by 38%,further confirming the consistent and effective lateral mode control capability offered by our design.

关 键 词：antimonide semiconductor lasers FAR-FIELD mode control 

分 类 号：TN31[电子电信—物理电子学] TN248