Non-volatile photonic-electronic memory via 3D monolithic ferroelectric-silicon ring resonator  

作　　者：Hang Chen 

机构地区：[1]Department of Electronic Engineering,Tsinghua University,Beijing 100084,China

出　　处：《Light(Science & Applications)》2024年第11期2441-2442,共2页光（科学与应用)（英文版）

摘　　要：A novel non-volatile photonic-electronic memory,3D integrating an Al-doped HfO2 ferroelectric thin film onto a silicon photonic platform using fully compatible electronic and photonic fabrication processes,enables electrically/optically programmable,non-destructively readable,and multi-level storage functions.

关 键 词：RESONATOR FERROELECTRIC ELECTRONIC 

分 类 号：TN2[电子电信—物理电子学]