Enhanced efficiency of high-speed Si and Si-based PbSe MSM photodiodes with integrated photon-trapping holes at 800–1550 nm wavelengths  

作　　者：Lixin Liu Jun Gou Chunyu Li Jiayue Han Xiutao Yang Jin Chen Zijian Zhang Zheyuan Xie He Yu Zhiming Wu Jun Wang 刘立新;苟君;李春雨;韩嘉悦;杨秀涛;陈进;张子健;谢哲远;于贺;吴志明;王军(School of Optoelectronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China;State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China;Key Laboratory of Science and Technology on Infrared Detector,Luoyang 471099,China)

机构地区：[1]School of Optoelectronic Science and Engineering,University of Electronic Science and Technology of China,Chengdu 610054,China [2]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China [3]Key Laboratory of Science and Technology on Infrared Detector,Luoyang 471099,China

出　　处：《Chinese Optics Letters》2024年第10期58-64,共7页中国光学快报（英文版）

基　　金：supported by the Natural Science Foundation of Sichuan Province(Nos.2024NSFSC0475 and 2024NSFSC1444);the National Natural Science Foundation of China(Nos.62175026,62171094,and 61875031);the Aeronautical Science Foundation of China(No.20230024080001)。

摘　　要：We theoretically and experimentally demonstrate a cylinder-shaped hole array with a small depth and an appropriate period integrated on a silicon-on-insulator substrate can enhance infrared absorption due to more bending of light and a higher back reflection.The Si metal-semiconductor-metal(MSM)photodiode with an hole array,whose depth is 250 nm,exhibits a4-fold improved external quantum efficiency(EQE)of 81%,and an ultra-fast impulse response speed of 22 ps enabling a 3 d B bandwidth of up to 23.9 GHz.PbSe film with a thickness of 80 nm is integrated to broaden the response wavelength.A more than 500%EQE enhancement of the Si-based PbSe photodiode with 150-nm-deep photon-trapping holes is achieved at1550 nm compared to the device without hole structures.

关 键 词：Si photodiode photon-trapping holes MSM Si-based PbSe photodiode enhanced EQE 

分 类 号：TN31[电子电信—物理电子学]