Study on irradiation effect and damage mechanism in cascode GaN HEMT irradiated by 10 MeV electron  

作　　者：Hongxia Li Yuxin Lu Rongxing Cao Xuelin Yang Xin Huang Yucai Wang Xianghua Zeng Yuxiong Xue 

机构地区：[1]College of Electrical,Energy and Power Engineering,Yangzhou University,Yangzhou 225127,China [2]State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,Beijing 100871,China [3]Innovation Center for Irradiation Application,Beijing 102413,China

出　　处：《Space Solar Power and Wireless Transmission》2024年第1期61-68,共8页空间电力与无线传输（英文）

基　　金：supported by the Grant of National Key Laboratory of Materials Behavior and Evaluation Technology in Space Environment,China(WDZC-HGD-2022-11);State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,China,and the Postgraduate Research and Practice Innovation Program of Jiangsu Province,China(No.SJCX23_1930);National Natural Science Foundation of China(NSFC)Youth Project“Study on the Generation and Evolutionary behavior of Proton Irradiation Defects in temperature-dependent CsPbBr3 quantum Dots”(Project No.:12305310).

摘　　要：This study investigated the irradiation effect of cascode-structure GaN HEMT(High Electron Mobility Transistor)devices,employing high-energy electrons with an energy of 10 MeV and irradiation doses ranging from 5 to 80 Mrad(Si).The variation of electrical properties of the device under annealing condition was analyzed.Geant4 and TCAD simulations were used to analyze the irradiation effect and damage mechanisms.The results show that the threshold voltage has obvious negative drift and the drain current increases after irradiation.The threshold voltage deviation amplitude of the device increases with the increase of irradiation dose,and the maximum deviation is 1.41V.Annealing at high temperatures(80℃,120℃ and 145℃)partially restores the electrical properties,with a 0.49 V restoration in threshold voltage at 145℃.Geant4 simulations reveal that enhanced Si MOSFET is more susceptible to total dose effects.TCAD simulations of enhanced Si MOSFET devices demonstrate an increase in electric field intensity,trapped electron concentration,and hole concentration in Si and SiO_(2) layers with the increase of irradiation dose.These findings can provide support for the space application and irradiation hardening of cascode GaN HEMT devices.

关 键 词：Electron irradiation Total dose effect Cascode GaN HEMT High temperature annealing Electrical properties 

分 类 号：TN32[电子电信—物理电子学]