Yb_(2)O_(3)对PZT基压电陶瓷强场介电损耗的影响  

Effect of Yb_(2)O_(3)on the Dielectric Loss at High Electric Field of PZT-based Piezoceramics

作　　者：戴昭波 秦洁 褚涛 钟敏 石钦 DAI Zhaobo;QIN Jie;CHU Tao(ZHONG Min 1,SHI Qin 1,21 Guizhou Zhenhua Hongyun Electronics Co.,Ltd.,Guiyang 550018,China;Guizhou Zhenhua Electronic Information Industry Technology Research Co.,Ltd.,Guiyang 550018,China)

机构地区：[1]贵州振华红云电子有限公司,贵阳550018 [2]中国振华(集团)新云电子元器件有限责任公司,贵阳550018

出　　处：《材料导报》2024年第S02期67-69,共3页Materials Reports

基　　金：贵州省科技创新项目(202312)。

摘　　要：本工作系统地研究了Yb_(2)O_(3)掺杂对二元系大功率压电陶瓷材料Pb_(0.97)Sr_(0.03)(Zr_(0.52)Ti_(0.48))O_(3)+0.5mol%CaFeO_(5/2)(简称PSZT-Yb)晶粒尺寸、压电性能、介电损耗、强场介电损耗等的影响。不同比例元素掺杂陶瓷的压电常数、晶粒尺寸、机械品质因数和强场介电损耗有较大变化,在掺杂量为0.4wt%时,制备的压电陶瓷结构致密,晶粒大小均匀,综合性能最佳,具体参数如下:ε_(r)=1102,tanδ=0.40%,tanδ=0.90%(@400 V/mm),k_(p)=0.49,d 33=286 pC/N,Q_(m)=888。Pb_(0.97)Sr_(0.03)(Zr_(0.52)Ti_(0.48))O_(3)+0.5mol%CaFeO_(5/2)+x wt%Yb_(2)O_(3)piezoelectric ceramic(abbreviated as PSZT-Yb)were synthesized by traditional solid-state reaction method.The effects of Yb on dielectric,piezoelectric properties,dielectric loss at high electric field of the ceramics were investigated in detail.The piezoelectric constant,grain size,mechanical quality factor and dielectric loss at high electric field of the ceramics changed vary greatly with the doping amount.The piezoelectric ceramics with x=0.4 doped possesses the compact structure,uniform grain size,and exhibited the favorable electrical properties,which were listed as follows:ε_(r)=1102,tanδ=0.40%,tanδ=0.90%(@400 V/mm),k_(p)=0.49,d 33=286 pC/N,Q_(m)=888.

关 键 词：压电常数 低强场损耗 大功率 机械品质因数 

分 类 号：TM282[一般工业技术—材料科学与工程]