基于Multisim TTL实验电路的探讨与改进  

Discussion and Improvement of Multisim TTL Experimental Circuit

作　　者：阿布拉江·斯地克 阿曼尼沙·阿不都热合曼 Abulajiang Sidike;Amannisha Abudoureheman(School of Physics and Electrical Engineering,Kashi University,Kashi 844000,Xinjiang,China)

机构地区：[1]喀什大学物理与电气工程学院,新疆喀什844000

出　　处：《喀什大学学报》2024年第6期35-39,共5页Journal of Kashi University

摘　　要：通过对基本BJT开关电路、典型的TTL非门电路的静态特性和动态特性以及TTL与非门电路特性进行仿真研究,发现元件库里的很多型号的门电路的参数因为过于接近理想,存在测不出相应的实验数据等问题.为此,讨论了问题存在的原因,改进了电路设计,结果表明,改进后电路可以解决原门电路中存在的一些问题.Through simulation research on the static and dynamic characteristics of basic BJT switch circuits,typical TTL NOT gate circuits,and TTL NAND gate circuit characteristics,it was found that many types of gate circuits in the component library have problems such as inability to measure corresponding experimental data due to their parameters being too close to ideal.Therefore,the reasons for the problems were discussed,and the circuit design was improved.The results showed that the improved circuit can solve some of the problems in the original gate circuit.

关 键 词：TTL电路 静态特性 动态特性 传输特性 延迟时间 扇出系数 

分 类 号：TN791[电子电信—电路与系统]